Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

dc.bibliographicCitation.issue1eng
dc.bibliographicCitation.volume16
dc.contributor.authorTominaga, Junji
dc.contributor.authorKolobov, Alexander V.
dc.contributor.authorFons, Paul J.
dc.contributor.authorWang, Xiaomin
dc.contributor.authorSaito, Yuta
dc.contributor.authorNakano, Takashi
dc.contributor.authorHase, Muneaki
dc.contributor.authorMurakami, Shuichi
dc.contributor.authorHerfort, Jens
dc.contributor.authorTakagaki, Yukihiko
dc.date.accessioned2018-01-18T01:01:42Z
dc.date.available2019-06-28T12:38:57Z
dc.date.issued2015
dc.description.abstractMultiferroics, materials in which both magnetic and electric fields can induce each other, resulting in a magnetoelectric response, have been attracting increasing attention, although the induced magnetic susceptibility and dielectric constant are usually small and have typically been reported for low temperatures. The magnetoelectric response usually depends on d-electrons of transition metals. Here we report that in [(GeTe)2(Sb2Te3)l]m superlattice films (where l and m are integers) with topological phase transition, strong magnetoelectric response may be induced at temperatures above room temperature when the external fields are applied normal to the film surface. By ab initio computer simulations, it is revealed that the multiferroic properties are induced due to the breaking of spatial inversion symmetry when the p-electrons of Ge atoms change their bonding geometry from octahedral to tetrahedral. Finally, we demonstrate the existence in such structures of spin memory, which paves the way for a future hybrid device combining nonvolatile phase-change memory and magnetic spin memory.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1519
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4138
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Franciseng
dc.relation.doihttps://doi.org/10.1088/1468-6996/16/1/014402
dc.relation.ispartofseriesScience and Technology of Advanced Materials, Volume 16, Issue 1eng
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subjectmultiferroicseng
dc.subjectmagnetoresistanceeng
dc.subjecttopological insulatoreng
dc.subjectchalcogenide superlatticeeng
dc.subjectGeTe-Sb2Te3eng
dc.subjectphase change memoryeng
dc.subjectspintronicseng
dc.subjectcomputer simulationeng
dc.subject.ddc530eng
dc.titleGiant multiferroic effects in topological GeTe-Sb2Te3 superlatticeseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleScience and Technology of Advanced Materialseng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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