The electronic structure of ϵ-Ga2O3

dc.bibliographicCitation.firstPage22522eng
dc.bibliographicCitation.issue2eng
dc.bibliographicCitation.volume7eng
dc.contributor.authorMulazzi, M.
dc.contributor.authorReichmann, F.
dc.contributor.authorBecker, A.
dc.contributor.authorKlesse, W.M.
dc.contributor.authorAlippi, P.
dc.contributor.authorFiorentini, V.
dc.contributor.authorParisini, A.
dc.contributor.authorBosi, M.
dc.contributor.authorFornari, R.
dc.date.accessioned2021-10-20T13:05:04Z
dc.date.available2021-10-20T13:05:04Z
dc.date.issued2019
dc.description.abstractThe electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7071
dc.identifier.urihttps://doi.org/10.34657/6118
dc.language.isoengeng
dc.publisherMelville, NY : AIP Publ.eng
dc.relation.doihttps://doi.org/10.1063/1.5054395
dc.relation.essn2166-532X
dc.relation.ispartofseriesAPL materials : high impact open access journal in functional materials science 7 (2019), Nr. 2eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectBinary alloyseng
dc.subjectCalculationseng
dc.subjectElectronic structureeng
dc.subjectElectronseng
dc.subjectGallium compoundseng
dc.subjectPhotoelectron spectroscopyeng
dc.subjectUranium alloyseng
dc.subjectValence bandseng
dc.subjectVanadium alloyseng
dc.subjectX rayseng
dc.subjectAb initio calculationseng
dc.subjectCore-level spectraeng
dc.subjectEnergy separationseng
dc.subjectFree electron masseng
dc.subjectHybrid density functionaleng
dc.subjectOptical experimentseng
dc.subjectSatellite structureeng
dc.subjectValence-band maximumseng
dc.subjectCore levelseng
dc.subject.ddc620eng
dc.subject.ddc600eng
dc.titleThe electronic structure of ϵ-Ga2O3eng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleAPL materials : high impact open access journal in functional materials scienceeng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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