The electronic structure of ϵ-Ga2O3
dc.bibliographicCitation.firstPage | 22522 | eng |
dc.bibliographicCitation.issue | 2 | eng |
dc.bibliographicCitation.volume | 7 | eng |
dc.contributor.author | Mulazzi, M. | |
dc.contributor.author | Reichmann, F. | |
dc.contributor.author | Becker, A. | |
dc.contributor.author | Klesse, W.M. | |
dc.contributor.author | Alippi, P. | |
dc.contributor.author | Fiorentini, V. | |
dc.contributor.author | Parisini, A. | |
dc.contributor.author | Bosi, M. | |
dc.contributor.author | Fornari, R. | |
dc.date.accessioned | 2021-10-20T13:05:04Z | |
dc.date.available | 2021-10-20T13:05:04Z | |
dc.date.issued | 2019 | |
dc.description.abstract | The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/7071 | |
dc.identifier.uri | https://doi.org/10.34657/6118 | |
dc.language.iso | eng | eng |
dc.publisher | Melville, NY : AIP Publ. | eng |
dc.relation.doi | https://doi.org/10.1063/1.5054395 | |
dc.relation.essn | 2166-532X | |
dc.relation.ispartofseries | APL materials : high impact open access journal in functional materials science 7 (2019), Nr. 2 | eng |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject | Binary alloys | eng |
dc.subject | Calculations | eng |
dc.subject | Electronic structure | eng |
dc.subject | Electrons | eng |
dc.subject | Gallium compounds | eng |
dc.subject | Photoelectron spectroscopy | eng |
dc.subject | Uranium alloys | eng |
dc.subject | Valence bands | eng |
dc.subject | Vanadium alloys | eng |
dc.subject | X rays | eng |
dc.subject | Ab initio calculations | eng |
dc.subject | Core-level spectra | eng |
dc.subject | Energy separations | eng |
dc.subject | Free electron mass | eng |
dc.subject | Hybrid density functional | eng |
dc.subject | Optical experiments | eng |
dc.subject | Satellite structure | eng |
dc.subject | Valence-band maximums | eng |
dc.subject | Core levels | eng |
dc.subject.ddc | 620 | eng |
dc.subject.ddc | 600 | eng |
dc.title | The electronic structure of ϵ-Ga2O3 | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | APL materials : high impact open access journal in functional materials science | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IKZ | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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