Electron transport in a slot-gate Si MOSFET

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dc.bibliographicCitation.journalTitleEurophysics Letters , Volume 97, Issue 3eng
dc.contributor.authorShlimak, I.
dc.contributor.authorGinodman, V.
dc.contributor.authorButenko, A.
dc.contributor.authorFriedland, K.-J
dc.contributor.authorKravchenko, S.V.
dc.date.available2019-06-28T12:38:10Z
dc.date.issued2008
dc.description.abstractThe transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of unequal gate voltages, the longitudinal resistances on the opposite sides of the sample differ from each other because the originated Hall voltage difference is added to the longitudinal voltage only on one side depending on the gradient of the gate voltages and the direction of the external magnetic field. After subtracting the Hall voltage difference, the increase in longitudinal resistance is observed when electrons on the opposite sides of the slot occupy Landau levels with different spin orientationseng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3933
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/0803.4432
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc530eng
dc.titleElectron transport in a slot-gate Si MOSFETeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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