Characteristics of diamond turned NiP smoothed with ion beam planarization technique

Abstract

Background: Diamond turning is widely used in machining metals and semiconductors but the turning marks are incurred on machined components due to the mechanics of the technology. The marks are generally harmful to the systems comprising of the machined components. Therefore, the capability of ion beam planarization (IBP) to reduce turning marks of diamond turned metal surfaces was investigated using NiP as an example. Methods: The turning marks and thereby roughness was reduced by IBP with respect to different spatial wavelengths and amplitudes of turning marks. Different thickness of coating resist was also examined in order to find out the potential effects of resist thickness on the reduction of turning marks and roughness. Additionally, the effect of multiple planarization steps was also analyzed. Results: The spatial wavelength and depth of turning marks have only minor impact on the degree of surface roughness reduction. Thicker coating tends to achieve smoother surface after coating turned NiP while ion beam etching can keep surface roughness almost unchanged in our experiments. The surface roughness of diamond turned NiP drops exponentially with processing steps under experimented conditions. Using up to five IBP steps, the surface roughness can be reduced up to one order of magnitude (from Rq ~ 6.5 nm to Rq ~ 0.7 nm). Conclusions: IBP technique performs very well in reducing turning marks on diamond turned NiP surfaces. The surface roughness can be further improved by optimizing the properties of planarizing resist layer and coating processes to enhance the IBP technique as a final surface finishing technology.