Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
dc.bibliographicCitation.journalTitle | Nature Communications | eng |
dc.bibliographicCitation.volume | 7 | |
dc.contributor.author | Ly, Thuc Hue | |
dc.contributor.author | Perello, David J. | |
dc.contributor.author | Zhao, Jiong | |
dc.contributor.author | Deng, Qingming | |
dc.contributor.author | Kim, Hyun | |
dc.contributor.author | Han, Gang Hee | |
dc.contributor.author | Chae, Sang Hoon | |
dc.contributor.author | Jeong, Hye Yun | |
dc.contributor.author | Lee, Young Hee | |
dc.date.accessioned | 2018-06-07T16:42:23Z | |
dc.date.available | 2019-06-28T07:31:57Z | |
dc.date.issued | 2016 | |
dc.description.abstract | Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures and band dispersion relations that depend on the inter-domain misorientation angle. Here, we explore misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations. Transmission electron microscopy indicates that grain boundaries are primarily composed of 5–7 dislocation cores with periodicity and additional complex defects formed at high angles, obeying the classical low-angle theory for angles <22°. The inter-domain mobility is minimized for angles <9° and increases nonlinearly by two orders of magnitude before saturating at ∼16 cm2 V−1 s−1 around misorientation angle≈20°. This trend is explained via grain-boundary electrostatic barriers estimated from density functional calculations and experimental tunnelling barrier heights, which are ≈0.5 eV at low angles and ≈0.15 eV at high angles (≥20°). | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/4987 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/1497 | |
dc.language.iso | eng | eng |
dc.publisher | London : Nature Publishing Group | eng |
dc.relation.doi | https://doi.org/10.1038/ncomms10426 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | Atomic and molecular physics | eng |
dc.subject.other | Electronic properties and devices | eng |
dc.subject.other | Nanoscience and technology | eng |
dc.title | Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |