Nanostructured Silicon Matrix for Materials Engineering

dc.bibliographicCitation.articleNumber2206318
dc.bibliographicCitation.firstPage2206318
dc.bibliographicCitation.issue12
dc.bibliographicCitation.journalTitleSmall : nano microeng
dc.bibliographicCitation.volume19
dc.contributor.authorLiu, Poting
dc.contributor.authorSchleusener, Alexander
dc.contributor.authorZieger, Gabriel
dc.contributor.authorBochmann, Arne
dc.contributor.authorvan Spronsen, Matthijs A.
dc.contributor.authorSivakov, Vladimir
dc.date.accessioned2023-02-22T06:09:19Z
dc.date.available2023-02-22T06:09:19Z
dc.date.issued2023
dc.description.abstractTin-containing layers with different degrees of oxidation are uniformly distributed along the length of silicon nanowires formed by a top-down method by applying metalorganic chemical vapor deposition. The electronic and atomic structure of the obtained layers is investigated by applying nondestructive surface-sensitive X-ray absorption near edge spectroscopy using synchrotron radiation. The results demonstrated, for the first time, a distribution effect of the tin-containing phases in the nanostructured silicon matrix compared to the results obtained for planar structures at the same deposition temperatures. The amount and distribution of tin-containing phases can be effectively varied and controlled by adjusting the geometric parameters (pore diameter and length) of the initial matrix of nanostructured silicon. Due to the occurrence of intense interactions between precursor molecules and decomposition by-products in the nanocapillary, as a consequence of random thermal motion of molecules in the nanocapillary, which leads to additional kinetic energy and formation of reducing agents, resulting in effective reduction of tin-based compounds to a metallic tin state for molecules with the highest penetration depth in the nanostructured silicon matrix. This effect will enable clear control of the phase distributions of functional materials in 3D matrices for a wide range of applications.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11480
dc.identifier.urihttp://dx.doi.org/10.34657/10513
dc.language.isoeng
dc.publisherWeinheim : Wiley-VCH
dc.relation.doihttps://doi.org/10.1002/smll.202206318
dc.relation.essn1613-6829
dc.relation.issn1613-6810
dc.rights.licenseCC BY-NC-ND 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0
dc.subject.ddc570
dc.subject.ddc620
dc.subject.othernanocapillaryeng
dc.subject.otherphase controleng
dc.subject.othersilicon nanowireseng
dc.subject.othertin oxideseng
dc.subject.otherXANESeng
dc.titleNanostructured Silicon Matrix for Materials Engineeringeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIPHT
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
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