Origin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templates

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dc.bibliographicCitation.volume471
dc.contributor.authorMogilatenko, A.
dc.contributor.authorKirmse, H.
dc.contributor.authorHagedorn, S.
dc.contributor.authorRichter, E.
dc.contributor.authorZeimer, U.
dc.contributor.authorWeyers, M.
dc.contributor.authorTränkle, G.
dc.date.available2019-06-28T12:38:22Z
dc.date.issued2013
dc.description.abstracta-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1bar 100]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11bar 20](Al,Ga)Neng
dc.description.abstract[0001]Al2O3 at the ridge sidewalls. Faster growth of the top (11bar 20)(Al,Ga)N facet in the vertical direction leads to the overgrowth of c-plane (Al,Ga)N nucleated on the horizontal ridge and trench surfaces. Phase separation into binary GaN and AlN takes place during the first growth stages. However, this fades out and does not influence the composition of the final thick a-plane (Al,Ga)N layer.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1605
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3996
dc.language.isoengeng
dc.publisherMilton Park : Taylor & Franciseng
dc.relation.doihttps://doi.org/10.1088/1742-6596/471/1/012038
dc.relation.ispartofseriesJournal of Physics: Conference Series, Volume 471eng
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subjectA-planeeng
dc.subjectAlNeng
dc.subjectGrowth stageseng
dc.subjectN layerseng
dc.subjectNanobeam diffractioneng
dc.subjectVertical directioneng
dc.subject.classificationKonferenzschriftger
dc.subject.ddc530eng
dc.titleOrigin of a-plane (Al,Ga)N formation on patterned c-plane AIN/sapphire templateseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleJournal of Physics: Conference Serieseng
tib.accessRightsopenAccesseng
tib.relation.conference18th Microscopy of Semiconducting Materials Conference (MSM XVIII), 7.-11.04.2013, Oxford, UKeng
wgl.contributorFBHeng
wgl.subjectPhysikeng
wgl.typeKonferenzbeitrageng
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