Resonant Rayleigh scattering in ordered and intentionally disordered semiconductor superlattices

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dc.bibliographicCitation.journalTitlePhyical Review Beng
dc.contributor.authorBellani, V.
dc.contributor.authorAmado, M.
dc.contributor.authorDiez, E.
dc.contributor.authorKoerdt, C.
dc.contributor.authorPotemski, M.
dc.contributor.authorHey, R.
dc.date.accessioned2016-03-24T17:37:59Z
dc.date.available2019-06-28T12:38:09Z
dc.date.issued2007
dc.description.abstractWe report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3910
dc.language.isoengeng
dc.publisherCambridge : arXiv
dc.relation.urihttp://arxiv.org/abs/cond-mat/0701621
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.subject.ddc530
dc.titleResonant Rayleigh scattering in ordered and intentionally disordered semiconductor superlattices
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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