Nanostructured In3SbTe2 antennas enable switching from sharp dielectric to broad plasmonic resonances

dc.bibliographicCitation.firstPage3871eng
dc.bibliographicCitation.issue17eng
dc.bibliographicCitation.lastPage3882eng
dc.bibliographicCitation.volume11eng
dc.contributor.authorHeßler, Andreas
dc.contributor.authorWahl, Sophia
dc.contributor.authorKristensen, Philip Trøst
dc.contributor.authorWuttig, Matthias
dc.contributor.authorBusch, Kurt
dc.contributor.authorTaubner, Thomas
dc.date.accessioned2022-11-24T06:26:22Z
dc.date.available2022-11-24T06:26:22Z
dc.date.issued2022
dc.description.abstractPhase-change materials (PCMs) allow for non-volatile resonance tuning of nanophotonic components. Upon switching, they offer a large dielectric contrast between their amorphous and crystalline phases. The recently introduced “plasmonic PCM” In3SbTe2 (IST) additionally features in its crystalline phase a sign change of its permittivity over a broad infrared spectral range. While optical resonance switching in unpatterned IST thin films has been investigated before, nanostructured IST antennas have not been studied, yet. Here, we present numerical and experimental investigations of nanostructured IST rod and disk antennas. By crystallizing the IST with microsecond laser pulses, we switched individual antennas from narrow dielectric to broad plasmonic resonances. For the rod antennas, we demonstrated a resonance shift of up to 1.2 µm (twice the resonance width), allowing on/off switching of plasmonic resonances with a contrast ratio of 2.7. With the disk antennas, we realized an increase of the resonance width by more than 800% from 0.24 µm to 1.98 µm while keeping the resonance wavelength constant. Further, we demonstrated intermediate switching states by tuning the crystallization depth within the resonators. Our work empowers future design concepts for nanophotonic applications like active spectral filters, tunable absorbers, and switchable flat optics.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10428
dc.identifier.urihttp://dx.doi.org/10.34657/9464
dc.language.isoengeng
dc.publisherBerlin : de Gruytereng
dc.relation.doihttps://doi.org/10.1515/nanoph-2022-0041
dc.relation.essn2192-8614
dc.relation.ispartofseriesNanophotonics 11 (2022), Nr. 17eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectdielectric metasurfaceseng
dc.subjectinfrared active metasurfaceseng
dc.subjectphase-change materialseng
dc.subjectplasmonic metasurfaceseng
dc.subjectresonance switchingeng
dc.subject.ddc530eng
dc.titleNanostructured In3SbTe2 antennas enable switching from sharp dielectric to broad plasmonic resonanceseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleNanophotonicseng
tib.accessRightsopenAccesseng
wgl.contributorMBIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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