Investigation of emitter homogeneity on laser doped emitters

dc.bibliographicCitation.firstPage232eng
dc.bibliographicCitation.journalTitleEnergy Procediaeng
dc.bibliographicCitation.volume8eng
dc.contributor.authorGermershausen, S.
dc.contributor.authorBartholomäus, L.
dc.contributor.authorSeidel, U.
dc.contributor.authorHanisch, N.
dc.contributor.authorSchieferdecker, A.
dc.contributor.authorKüsters, K.H.
dc.contributor.authorKittler, M.
dc.contributor.authorAmetowobla, M.
dc.contributor.authorEinsele, F.
dc.contributor.authorDallmann, G.
dc.date.accessioned2020-09-25T12:04:53Z
dc.date.available2020-09-25T12:04:53Z
dc.date.issued2011
dc.description.abstractThe selective emitter formation by laser doping is a well known process to increase the efficiency of silicon solar cells [1], [2]. For the characterization of laser doped emitters, SIMS (Secondary Ion Mass Spectroscopy) and ECV (Electrochemical Capacitance Voltage Measurement) techniques are used to analyze the emitter profile [3]. It is very difficult to get acceptable result by SIMS on a textured surface, so only ECV can be used. It has been shown, that a charge carrier depth profile can be measured on a homogeneous emitter only by ECV. The use of laser doping results in a non-homogeneous emitter. We have shown that the emitter depth is not just a function of the pulse power, but in addition of the surface structure of the wafer. The texture seems responsible for a strong variability in the doping profile. It has been shown, that the ECV measurement is not applicable to characterize the emitter depth on laser doped areas, because of the microscopic inhomogeneities in the emitter on the macroscopic measurement area. The real emitter profiles are to complex to be characterized by SIMS or ECV. We have shown that the variation in the emitter profile is resulting from the texture in the laser-doped regions.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4320
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5691
dc.language.isoengeng
dc.publisherAmsterdam [u.a.] : Elseviereng
dc.relation.doihttps://doi.org/10.1016/j.egypro.2011.06.129
dc.relation.issn1876-6102
dc.rights.licenseCC BY-NC-ND 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/eng
dc.subject.ddc620eng
dc.subject.otherDoping profileeng
dc.subject.otherLaser dopingeng
dc.subject.otherSelective emittereng
dc.subject.otherCapacitanceeng
dc.subject.otherMass spectrometryeng
dc.subject.otherSecondary ion mass spectrometryeng
dc.subject.otherSilicon solar cellseng
dc.subject.otherDoping profileseng
dc.subject.otherElectrochemical capacitance voltageeng
dc.subject.otherLaser dopingeng
dc.subject.otherMacroscopic measurementseng
dc.subject.otherMicroscopic inhomogeneitieseng
dc.subject.otherSecondary ion mass spectroscopyeng
dc.subject.otherSelective emitterseng
dc.subject.otherTextured surfaceeng
dc.subject.otherSilicon waferseng
dc.titleInvestigation of emitter homogeneity on laser doped emitterseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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