Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

dc.bibliographicCitation.firstPage1540
dc.bibliographicCitation.issue10
dc.bibliographicCitation.volume11
dc.contributor.authorKalishettyhalli Mahadevaiah, Mamathamba
dc.contributor.authorPerez, Eduardo
dc.contributor.authorLisker, Marco
dc.contributor.authorSchubert, Markus Andreas
dc.contributor.authorPerez-Bosch Quesada, Emilio
dc.contributor.authorWenger, Christian
dc.contributor.authorMai, Andreas
dc.date.accessioned2023-04-03T04:38:33Z
dc.date.available2023-04-03T04:38:33Z
dc.date.issued2022
dc.description.abstractThe resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2 O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.eng
dc.description.sponsorshipLeibniz_Fonds
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11842
dc.identifier.urihttp://dx.doi.org/10.34657/10875
dc.language.isoeng
dc.publisherBasel : MDPI
dc.relation.doihttps://doi.org/10.3390/electronics11101540
dc.relation.essn2079-9292
dc.relation.ispartofseriesElectronics : open access journal 11 (2022), Nr. 10
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0
dc.subjectbi-layerseng
dc.subjectCMOS compatibilityeng
dc.subjectconductive filamenteng
dc.subjectembedded applicationseng
dc.subjectmemristive deviceeng
dc.subjectquantum point contact modeleng
dc.subjectvariabilityeng
dc.subject.ddc530
dc.titleModulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layerseng
dc.typearticle
dc.typeText
dcterms.bibliographicCitation.journalTitleElectronics : open access journal
tib.accessRightsopenAccess
wgl.contributorIHP
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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