Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets
dc.bibliographicCitation.issue | 5 | eng |
dc.bibliographicCitation.journalTitle | AIP Advances | eng |
dc.bibliographicCitation.volume | 6 | |
dc.contributor.author | Jenichen, B. | |
dc.contributor.author | Hanke, M. | |
dc.contributor.author | Hilse, M. | |
dc.contributor.author | Herfort, J. | |
dc.contributor.author | Trampert, A. | |
dc.contributor.author | Erwin, S.C. | |
dc.date.accessioned | 2018-01-20T03:00:38Z | |
dc.date.available | 2019-06-28T12:39:08Z | |
dc.date.issued | 2016 | |
dc.description.abstract | GaAs/Fe3Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe3Si shells exhibit nanofacets. These facets consist of well pronounced Fe3Si{111} planes. Density functional theory reveals that the Si-terminated Fe3Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe3Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1 1 ̄ 0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe3Si shells and GaAs cores occurring at increased growth temperatures. | eng |
dc.description.version | publishedVersion | eng |
dc.format | application/pdf | |
dc.identifier.uri | https://doi.org/10.34657/1476 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4199 | |
dc.language.iso | eng | eng |
dc.publisher | Cambridge : arXiv | eng |
dc.relation.uri | https://arxiv.org/abs/1512.02103 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | III-V semiconductors | eng |
dc.subject.other | X-ray diffraction | eng |
dc.subject.other | Epitaxy Density functional theory | eng |
dc.subject.other | Nanowires | eng |
dc.title | Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | PDI | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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