This item is non-discoverable
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
| dc.bibliographicCitation.journalTitle | Applied Physics Letters | eng |
| dc.contributor.author | Musolino, Mattia | |
| dc.contributor.author | Tahraoui, Abbes | |
| dc.contributor.author | Limbach, Friederich | |
| dc.contributor.author | Lähnemann, Jonas | |
| dc.contributor.author | Jahn, Uwe | |
| dc.contributor.author | Brandt, Oliver | |
| dc.contributor.author | Geelhaar, Lutz | |
| dc.contributor.author | Riechert, Henning | |
| dc.date.accessioned | 2016-03-24T17:37:20Z | |
| dc.date.available | 2019-06-28T12:39:33Z | |
| dc.date.issued | 2014 | |
| dc.description.abstract | We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices fabricated with either Ni/Au or indium tin oxide (ITO) top contact. The NW-LEDs with ITO exhibit a number density of NWs emitting electroluminescence about ten times higher, significantly lower turn-on voltage and series resistance, and a relative external quantum efficiency more than one order of magnitude higher than the sample with Ni/Au. These results show that limitations in the performance of such devices reported so far can be overcome by improving the p-type top-contact. | eng |
| dc.description.version | publishedVersion | eng |
| dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/4302 | |
| dc.language.iso | eng | eng |
| dc.publisher | Cambridge : arXiv | eng |
| dc.relation.uri | http://arxiv.org/abs/1410.3709 | |
| dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
| dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
| dc.subject.ddc | 530 | eng |
| dc.title | Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires | eng |
| dc.type | Article | eng |
| dc.type | Text | eng |
| tib.accessRights | openAccess | eng |
| wgl.contributor | PDI | eng |
| wgl.subject | Physik | eng |
| wgl.type | Zeitschriftenartikel | eng |