Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

dc.bibliographicCitation.firstPage126501eng
dc.bibliographicCitation.issue12eng
dc.bibliographicCitation.journalTitleApplied Physics Expresseng
dc.bibliographicCitation.volume12eng
dc.contributor.authorLiddy, Kyle J.
dc.contributor.authorGreen, Andrew J.
dc.contributor.authorHendricks, Nolan S.
dc.contributor.authorHeller, Eric R.
dc.contributor.authorMoser, Neil A.
dc.contributor.authorLeedy, Kevin D.
dc.contributor.authorPopp, Andreas
dc.contributor.authorLindquist, Miles T.
dc.contributor.authorTetlak, Stephen E.
dc.contributor.authorWagner, Günter
dc.date.accessioned2021-10-20T11:59:39Z
dc.date.available2021-10-20T11:59:39Z
dc.date.issued2019
dc.description.abstractWe report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm-1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance. © Not subject to copyright in the USA. Contribution of Wright-Patterson AFB.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7064
dc.identifier.urihttps://doi.org/10.34657/6111
dc.language.isoengeng
dc.publisherBristol : IOP Publ.eng
dc.relation.doihttps://doi.org/10.7567/1882-0786/ab4d1c
dc.relation.essn1882-0786
dc.relation.issn1882-0778
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherGallium compoundseng
dc.subject.otherMOS deviceseng
dc.subject.otherOxide semiconductorseng
dc.subject.otherRefractory materialseng
dc.subject.otherRefractory metalseng
dc.subject.otherAccess resistanceeng
dc.subject.otherDC performanceeng
dc.subject.otherImplant technologyeng
dc.subject.otherLow-parasiticeng
dc.subject.otherMaximum transconductanceeng
dc.subject.otherOn-resistanceeng
dc.subject.otherPower switchingeng
dc.subject.otherSelf-aligned gateeng
dc.subject.otherPower MOSFETeng
dc.titleThin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gateseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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