Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
dc.bibliographicCitation.firstPage | 126501 | eng |
dc.bibliographicCitation.issue | 12 | eng |
dc.bibliographicCitation.journalTitle | Applied Physics Express | eng |
dc.bibliographicCitation.volume | 12 | eng |
dc.contributor.author | Liddy, Kyle J. | |
dc.contributor.author | Green, Andrew J. | |
dc.contributor.author | Hendricks, Nolan S. | |
dc.contributor.author | Heller, Eric R. | |
dc.contributor.author | Moser, Neil A. | |
dc.contributor.author | Leedy, Kevin D. | |
dc.contributor.author | Popp, Andreas | |
dc.contributor.author | Lindquist, Miles T. | |
dc.contributor.author | Tetlak, Stephen E. | |
dc.contributor.author | Wagner, Günter | |
dc.date.accessioned | 2021-10-20T11:59:39Z | |
dc.date.available | 2021-10-20T11:59:39Z | |
dc.date.issued | 2019 | |
dc.description.abstract | We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm-1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance. © Not subject to copyright in the USA. Contribution of Wright-Patterson AFB. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/7064 | |
dc.identifier.uri | https://doi.org/10.34657/6111 | |
dc.language.iso | eng | eng |
dc.publisher | Bristol : IOP Publ. | eng |
dc.relation.doi | https://doi.org/10.7567/1882-0786/ab4d1c | |
dc.relation.essn | 1882-0786 | |
dc.relation.issn | 1882-0778 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | Gallium compounds | eng |
dc.subject.other | MOS devices | eng |
dc.subject.other | Oxide semiconductors | eng |
dc.subject.other | Refractory materials | eng |
dc.subject.other | Refractory metals | eng |
dc.subject.other | Access resistance | eng |
dc.subject.other | DC performance | eng |
dc.subject.other | Implant technology | eng |
dc.subject.other | Low-parasitic | eng |
dc.subject.other | Maximum transconductance | eng |
dc.subject.other | On-resistance | eng |
dc.subject.other | Power switching | eng |
dc.subject.other | Self-aligned gate | eng |
dc.subject.other | Power MOSFET | eng |
dc.title | Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IKZ | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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