A graphene-based hot electron transistor

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dc.bibliographicCitation.firstPage1435eng
dc.bibliographicCitation.issue4eng
dc.bibliographicCitation.journalTitleNano Letterseng
dc.bibliographicCitation.volume13eng
dc.contributor.authorVaziri, S.
dc.contributor.authorLupina, G.
dc.contributor.authorHenkel, C.
dc.contributor.authorSmith, A.D.
dc.contributor.authorÖstling, M.
dc.contributor.authorDabrowski, J.
dc.contributor.authorLippert, G.
dc.contributor.authorMehr, W.
dc.contributor.authorLemme, M.C.
dc.date.accessioned2020-11-12T07:22:15Z
dc.date.available2020-11-12T07:22:15Z
dc.date.issued2013
dc.description.abstractWe experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 104.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4544
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5915
dc.language.isoengeng
dc.publisherWashington, DC : American Chemical Societyeng
dc.relation.doihttps://doi.org/10.1021/nl304305x
dc.relation.issn1530-6984
dc.rights.licenseACS AuthorChoiceeng
dc.rights.urihttps://pubs.acs.org/page/policy/authorchoice_termsofuse.htmleng
dc.subject.ddc530eng
dc.subject.otherGrapheneeng
dc.subject.otherhot carrier transporteng
dc.subject.otherhot electronseng
dc.subject.othertransistoreng
dc.subject.othertunnelingeng
dc.subject.otherHot electron transistorseng
dc.subject.otherON/OFF current ratioeng
dc.subject.otherSilicon Technologieseng
dc.subject.otherTransfer characteristicseng
dc.subject.otherWafer scaleeng
dc.subject.otherElectron tunnelingeng
dc.subject.otherHot carrierseng
dc.subject.otherHot electronseng
dc.subject.otherSiliconeng
dc.subject.otherSilicon waferseng
dc.subject.otherTransistorseng
dc.subject.otherGrapheneeng
dc.subject.othergraphiteeng
dc.subject.othernanomaterialeng
dc.subject.othersiliconeng
dc.subject.othergraphiteeng
dc.subject.othernanomaterialeng
dc.subject.otherarticleeng
dc.subject.otherchemistryeng
dc.subject.otherelectroneng
dc.subject.otherequipment designeng
dc.subject.othernanotechnologyeng
dc.subject.othersemiconductoreng
dc.subject.otherchemistryeng
dc.subject.otherElectronseng
dc.subject.otherEquipment Designeng
dc.subject.otherGraphiteeng
dc.subject.otherNanostructureseng
dc.subject.otherNanotechnologyeng
dc.subject.otherSiliconeng
dc.subject.otherTransistors, Electroniceng
dc.subject.otherElectronseng
dc.subject.otherEquipment Designeng
dc.subject.otherGraphiteeng
dc.subject.otherNanostructureseng
dc.subject.otherNanotechnologyeng
dc.subject.otherSiliconeng
dc.subject.otherTransistors, Electroniceng
dc.titleA graphene-based hot electron transistoreng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIHPeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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