Single-photon emission from isolated monolayer islands of InGaN

dc.bibliographicCitation.firstPage159eng
dc.bibliographicCitation.issue1eng
dc.bibliographicCitation.journalTitleLight : Science & Applicationseng
dc.bibliographicCitation.volume9eng
dc.contributor.authorSun, Xiaoxiao
dc.contributor.authorWang, Ping
dc.contributor.authorWang, Tao
dc.contributor.authorChen, Ling
dc.contributor.authorChen, Zhaoying
dc.contributor.authorGao, Kang
dc.contributor.authorAoki, Tomoyuki
dc.contributor.authorLi, Mo
dc.contributor.authorZhang, Jian
dc.contributor.authorSchulz, Tobias
dc.contributor.authorAlbrecht, Martin
dc.contributor.authorGe, Weikun
dc.contributor.authorArakawa, Yasuhiko
dc.contributor.authorShen, Bo
dc.contributor.authorHolmes, Mark
dc.contributor.authorWang, Xinqiang
dc.date.accessioned2021-11-19T07:59:25Z
dc.date.available2021-11-19T07:59:25Z
dc.date.issued2020
dc.description.abstractWe identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm. © 2020, The Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7365
dc.identifier.urihttps://doi.org/10.34657/6412
dc.language.isoengeng
dc.publisherLondon : Nature Publishing Groupeng
dc.relation.doihttps://doi.org/10.1038/s41377-020-00393-6
dc.relation.essn2047-7538
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherOptical materials and structureseng
dc.subject.otherSingle photons and quantum effectseng
dc.subject.otherInGaN monolayer islandeng
dc.subject.othernanopillar structureeng
dc.titleSingle-photon emission from isolated monolayer islands of InGaNeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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