The boson peak and the first sharp diffraction peak in (As2S3)x(GeS2)1–x glasses

Loading...
Thumbnail Image

Date

Editor

Advisor

Volume

24

Issue

3

Journal

Semiconductor Physics, Quantum Electronics & Optoelectronics (SQO)

Series Titel

Book Title

Publisher

Kyiv : Inst. of Semiconductor Physics

Supplementary Material

Other Versions

Link to publishers' Version

Abstract

The parameters of the boson peak (BP) and the first sharp diffraction peak (FSDP) in (As2S3)x(GeS2)1x glasses measured using high-resolution Raman spectroscopy and high-energy synchrotron X-ray diffraction measurements are examined as a function of x. It has been found that there is no correlation between the positions of BP and FSDP. The BP position shows a nonlinear composition behavior with a maximum at about x = 0.4, whereas the FSDP position changes virtually linearly with x. The intensities of both BP and FSDP show nonlinear composition dependences with the slope changes at x = 0.4, although there is no direct proportionality. Analysis of the partial structure factors for the glasses with x = 0.2, 0.4 and 0.6 obtained in another study has shown that the cation-cation atomic pairs of Ge–Ge, Ge–As and As–As make the largest contribution to FSDP, where the Ge–Ge and Ge–As pairs are dominant.

Description

Keywords GND

Conference

Publication Type

Article

Version

publishedVersion

Collections

License

CC BY-ND 4.0 Unported