Transport in ZnCoO thin films with stable bound magnetic polarons

dc.bibliographicCitation.firstPage76101eng
dc.bibliographicCitation.issue7eng
dc.bibliographicCitation.journalTitleAPL Materialseng
dc.bibliographicCitation.lastPage5059eng
dc.bibliographicCitation.volume2eng
dc.contributor.authorKaspar, T.
dc.contributor.authorFiedler, J.
dc.contributor.authorSkorupa, I.
dc.contributor.authorBürger, D.
dc.contributor.authorSchmidt, O.G.
dc.contributor.authorSchmidt, H.
dc.date.accessioned2020-09-06T07:58:42Z
dc.date.available2020-09-06T07:58:42Z
dc.date.issued2014
dc.description.abstractDiluted magnetic ZnCoO films with 5 at.% Co have been fabricated by pulsed laser deposition on c-plane sapphire substrates and Schottky and Ohmic contacts have been prepared in top-top configuration. The diode current is significantly reduced after the diode has been subjected to an external magnetic field. In the reverse bias range the corresponding positive magnetoresistance is persistent and amounts to more than 1800% (50 K), 240% (30 K), and 50% (5 K). This huge magnetoresistance can be attributed to the large internal magnetic field in depleted ZnCoO with ferromagnetic exchange between stable bound magnetic polarons.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/4217
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5588
dc.language.isoengeng
dc.publisherNew York, NY : American Inst. of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.4886216
dc.relation.issn2166-532X
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc620eng
dc.subject.otherZnCoO filmseng
dc.subject.otherpulsed laser depositioneng
dc.subject.othermagnetoresistanceeng
dc.titleTransport in ZnCoO thin films with stable bound magnetic polaronseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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