Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

dc.bibliographicCitation.firstPage2100459
dc.bibliographicCitation.issue5
dc.bibliographicCitation.volume6
dc.contributor.authorDe Guzman, Joyce Ann T.
dc.contributor.authorMarkevich, Vladimir P.
dc.contributor.authorCoutinho, José
dc.contributor.authorAbrosimov, Nikolay V.
dc.contributor.authorHalsall, Matthew P.
dc.contributor.authorPeaker, Anthony R.
dc.date.accessioned2022-12-14T07:33:40Z
dc.date.available2022-12-14T07:33:40Z
dc.date.issued2021-9-17
dc.description.abstractThe subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature-induced degradation (LeTID) in boron-doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n-type Czochralski-grown Si crystals co-doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep-level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat-treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B-doped p-type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10597
dc.identifier.urihttp://dx.doi.org/10.34657/9633
dc.language.isoeng
dc.publisherWeinheim : Wiley-VCH
dc.relation.doihttps://doi.org/10.1002/solr.202100459
dc.relation.essn2367-198X
dc.relation.ispartofseriesSolar RRL 6 (2021), Nr. 5
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectab initio modelingeng
dc.subjectboron–hydrogeneng
dc.subjectDLTSeng
dc.subjectLeTIDeng
dc.subjectpassivationeng
dc.subjectsiliconeng
dc.subjectsolar cellseng
dc.subject.ddc600
dc.titleElectronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Siliconeng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleSolar RRL
tib.accessRightsopenAccesseng
wgl.contributorIKZ
wgl.subjectUmweltwissenschaftenger
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
Electronic_Properties.pdf
Size:
1.91 MB
Format:
Adobe Portable Document Format
Description: