Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

dc.bibliographicCitation.firstPage2100108eng
dc.bibliographicCitation.issue23eng
dc.bibliographicCitation.volume218eng
dc.contributor.authorDe Guzman, Joyce Ann T.
dc.contributor.authorMarkevich, Vladimir P.
dc.contributor.authorHawkins, Ian D.
dc.contributor.authorAyedh, Hussein M.
dc.contributor.authorCoutinho, José
dc.contributor.authorBinns, Jeff
dc.contributor.authorFalster, Robert
dc.contributor.authorAbrosimov, Nikolay V.
dc.contributor.authorCrowe, Iain F.
dc.contributor.authorHalsall, Matthew P.
dc.contributor.authorPeaker, Anthony R.
dc.date.accessioned2022-04-05T07:43:23Z
dc.date.available2022-04-05T07:43:23Z
dc.date.issued2021
dc.description.abstractIndium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8574
dc.identifier.urihttps://doi.org/10.34657/7612
dc.language.isoengeng
dc.publisherWeinheim : Wiley-VCHeng
dc.relation.doihttps://doi.org/10.1002/pssa.202100108
dc.relation.essn1862-6319
dc.relation.ispartofseriesPhysica status solidi : A, Applied research 218 (2021), Nr. 23eng
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subjectindium-doped siliconeng
dc.subjectlight-induced degradationeng
dc.subjectoxygen recombination enhanced reactionseng
dc.subjectsolar cellseng
dc.titleIndium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Trapseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitlePhysica status solidi : A, Applied researcheng
tib.accessRightsopenAccesseng
wgl.contributorIKZeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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