Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

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dc.bibliographicCitation.journalTitleAnnalen der Physikeng
dc.contributor.authorShlimak, I.
dc.contributor.authorGolosov, D.I.
dc.contributor.authorButenko, A.
dc.contributor.authorFriedland, K.-J.
dc.contributor.authorKravchenko, S.V.
dc.date.accessioned2016-03-24T17:38:00Z
dc.date.available2019-06-28T12:38:10Z
dc.date.issued2009
dc.description.abstractWe report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/3930
dc.language.isoengeng
dc.publisherCambridge : arXiveng
dc.relation.urihttp://arxiv.org/abs/0909.1491
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
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dc.subject.ddc530eng
dc.titleConductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic fieldeng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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