Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes
dc.bibliographicCitation.firstPage | 215 | eng |
dc.bibliographicCitation.issue | 1 | eng |
dc.bibliographicCitation.journalTitle | Nanoscale Research Letters | eng |
dc.bibliographicCitation.lastPage | 291 | eng |
dc.bibliographicCitation.volume | 6 | eng |
dc.contributor.author | Harazim, S.M. | |
dc.contributor.author | Feng, P. | |
dc.contributor.author | Sanchez, S. | |
dc.contributor.author | Deneke, C. | |
dc.contributor.author | Mei, Y. | |
dc.contributor.author | Schmidt, O.G. | |
dc.date.accessioned | 2020-09-29T09:09:38Z | |
dc.date.available | 2020-09-29T09:09:38Z | |
dc.date.issued | 2011 | |
dc.description.abstract | Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://doi.org/10.34657/4386 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/5757 | |
dc.language.iso | eng | eng |
dc.publisher | New York, NY [u.a.] : Springer | eng |
dc.relation.doi | https://doi.org/10.1186/1556-276X-6-215 | |
dc.relation.issn | 1931-7573 | |
dc.rights.license | CC BY 2.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/2.0/ | eng |
dc.subject.ddc | 620 | eng |
dc.subject.other | Chlorine compounds | eng |
dc.subject.other | Electrolytes | eng |
dc.subject.other | III-V semiconductors | eng |
dc.subject.other | Ions | eng |
dc.subject.other | Nanostructures | eng |
dc.subject.other | Potash | eng |
dc.subject.other | Potassium chloride | eng |
dc.subject.other | Substrates | eng |
dc.subject.other | Chlorine compounds | eng |
dc.subject.other | Ions | eng |
dc.subject.other | Nanostructures | eng |
dc.subject.other | Transistors | eng |
dc.subject.other | Chloride electrolytes | eng |
dc.subject.other | Fully integrated | eng |
dc.subject.other | Ion separation | eng |
dc.subject.other | Nano channels | eng |
dc.subject.other | Nano-fluidic devices | eng |
dc.subject.other | Nanomembranes | eng |
dc.subject.other | Semiconductor substrate | eng |
dc.subject.other | Straight channel | eng |
dc.subject.other | Fully integrated | eng |
dc.subject.other | II-IV semiconductors | eng |
dc.subject.other | Ion currents | eng |
dc.subject.other | Ion separation | eng |
dc.subject.other | Nano channels | eng |
dc.subject.other | Nano-fluidic devices | eng |
dc.subject.other | Nanomembranes | eng |
dc.subject.other | On chips | eng |
dc.subject.other | Potassium chloride | eng |
dc.subject.other | Single chips | eng |
dc.subject.other | Straight channel | eng |
dc.subject.other | Field effect transistors | eng |
dc.subject.other | Field effect transistors | eng |
dc.title | Integrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranes | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Ingenieurwissenschaften | eng |
wgl.type | Zeitschriftenartikel | eng |
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