Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3

dc.bibliographicCitation.firstPage111102eng
dc.bibliographicCitation.issue11eng
dc.bibliographicCitation.journalTitleAPL materials : high impact open access journal in functional materials scienceeng
dc.bibliographicCitation.volume8eng
dc.contributor.authorWilhelm, Marek
dc.contributor.authorGiesen, Margret
dc.contributor.authorDuchoň, Tomáš
dc.contributor.authorMoors, Marco
dc.contributor.authorMueller, David N.
dc.contributor.authorHackl, Johanna
dc.contributor.authorBaeumer, Christoph
dc.contributor.authorHamed, Mai Hussein
dc.contributor.authorCao, Lei
dc.contributor.authorZhang, Hengbo
dc.contributor.authorPetracic, Oleg
dc.contributor.authorGlöß, Maria
dc.contributor.authorCramm, Stefan
dc.contributor.authorNemšák, Slavomír
dc.contributor.authorWiemann, Carsten
dc.contributor.authorDittmann, Regina
dc.contributor.authorSchneider, Claus M.
dc.contributor.authorMüller, Martina
dc.date.accessioned2021-10-26T06:04:36Z
dc.date.available2021-10-26T06:04:36Z
dc.date.issued2020
dc.description.abstractMagneto-ionic control of magnetism is a promising route toward the realization of non-volatile memory and memristive devices. Magneto-ionic oxides are particularly interesting for this purpose, exhibiting magnetic switching coupled to resistive switching, with the latter emerging as a perturbation of the oxygen vacancy concentration. Here, we report on electric-field-induced magnetic switching in a La0.7Sr0.3MnO3 (LSMO) thin film. Correlating magnetic and chemical information via photoemission electron microscopy, we show that applying a positive voltage perpendicular to the film surface of LSMO results in the change in the valence of the Mn ions accompanied by a metal-to-insulator transition and a loss of magnetic ordering. Importantly, we demonstrate that the voltage amplitude provides granular control of the phenomena, enabling fine-tuning of the surface electronic structure. Our study provides valuable insight into the switching capabilities of LSMO that can be utilized in magneto-ionic devices. © 2020 Author(s).eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/7098
dc.identifier.urihttps://doi.org/10.34657/6145
dc.language.isoengeng
dc.publisherMelville, NY : AIP Publ.eng
dc.relation.doihttps://doi.org/10.1063/5.0022150
dc.relation.essn2166-532X
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc620eng
dc.subject.otherDigital storageeng
dc.subject.otherElectric fieldseng
dc.subject.otherElectron microscopeseng
dc.subject.otherElectron microscopyeng
dc.subject.otherElectronic structureeng
dc.subject.otherLanthanum compoundseng
dc.subject.otherManganese compoundseng
dc.subject.otherManganese metallographyeng
dc.subject.otherMemristorseng
dc.subject.otherMetal insulator transitioneng
dc.subject.otherPhotoemissioneng
dc.subject.otherStrontium compoundseng
dc.subject.otherSwitchingeng
dc.subject.otherChemical informationeng
dc.subject.otherElectric field inducedeng
dc.subject.otherMetal-to-insulator transitionseng
dc.subject.otherOxygen vacancy concentrationeng
dc.subject.otherPhotoemission electron microscopyeng
dc.subject.otherResistive switchingeng
dc.subject.otherSurface electronic structureseng
dc.subject.otherSwitching capabilityeng
dc.subject.otherMagnetismeng
dc.titlePhotoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3eng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIOMeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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