Spectromicroscopy Studies of Silicon Nanowires Array Covered by Tin Oxide Layers

dc.bibliographicCitation.articleNumber2206322
dc.bibliographicCitation.firstPage2206322
dc.bibliographicCitation.issue10
dc.bibliographicCitation.journalTitleSmall : nano microeng
dc.bibliographicCitation.volume19
dc.contributor.authorTurishchev, Sergey
dc.contributor.authorSchleusener, Alexander
dc.contributor.authorChuvenkova, Olga
dc.contributor.authorParinova, Elena
dc.contributor.authorLiu, Poting
dc.contributor.authorManyakin, Maxim
dc.contributor.authorKurganskii, Sergei
dc.contributor.authorSivakov, Vladimir
dc.date.accessioned2023-02-22T06:09:19Z
dc.date.available2023-02-22T06:09:19Z
dc.date.issued2023
dc.description.abstractThe composition and atomic and electronic structure of a silicon nanowire (SiNW) array coated with tin oxide are studied at the spectromicroscopic level. SiNWs are covered from top to down with a wide bandgap tin oxide layer using a metal–organic chemical vapor deposition technique. Results obtained via scanning electron microscopy and X-ray diffraction showed that tin-oxide nanocrystals, 20 nm in size, form a continuous and highly developed surface with a complex phase composition responsible for the observed electronic structure transformation. The “one spot” combination, containing a chemically sensitive morphology and spectroscopic data, is examined via photoemission electron microscopy in the X-ray absorption near-edge structure spectroscopy (XANES) mode. The observed spectromicroscopy results showed that the entire SiNW surface is covered with a tin(IV) oxide layer and traces of tin(II) oxide and metallic tin phases. The deviation from stoichiometric SnO2 leads to the formation of the density of states sub-band in the atop tin oxide layer bandgap close to the bottom of the SnO2 conduction band. These observations open up the possibility of the precise surface electronic structures estimation using photo-electron microscopy in XANES mode.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/11481
dc.identifier.urihttp://dx.doi.org/10.34657/10514
dc.language.isoeng
dc.publisherWeinheim : Wiley-VCH
dc.relation.doihttps://doi.org/10.1002/smll.202206322
dc.relation.essn1613-6829
dc.relation.issn1613-6810
dc.rights.licenseCC BY-NC-ND 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0
dc.subject.ddc570
dc.subject.ddc620
dc.subject.otheratomic and electronic structureseng
dc.subject.otherphotoemission electron microscopy (PEEM)eng
dc.subject.othersilicon nanowireseng
dc.subject.othertin oxideeng
dc.subject.otherX-ray absorption near edge structures (XANES)eng
dc.titleSpectromicroscopy Studies of Silicon Nanowires Array Covered by Tin Oxide Layerseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccess
wgl.contributorIPHT
wgl.subjectIngenieurwissenschaftenger
wgl.typeZeitschriftenartikelger
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