Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

dc.bibliographicCitation.firstPage15506eng
dc.bibliographicCitation.journalTitleNature Communicationseng
dc.bibliographicCitation.lastPage2198eng
dc.bibliographicCitation.volume8eng
dc.contributor.authorHuber, D.
dc.contributor.authorReindl, M.
dc.contributor.authorHuo, Y.
dc.contributor.authorHuang, H.
dc.contributor.authorWildmann, J.S.
dc.contributor.authorSchmidt, O.G.
dc.contributor.authorRastelli, A.
dc.contributor.authorTrotta, R.
dc.date.accessioned2020-07-20T06:05:23Z
dc.date.available2020-07-20T06:05:23Z
dc.date.issued2017
dc.description.abstractThe development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies.eng
dc.description.fondsLeibniz_Fonds
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://doi.org/10.34657/3693
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/5064
dc.language.isoengeng
dc.publisherLondon : Nature Publishing Groupeng
dc.relation.doihttps://doi.org/10.1038/ncomms15506
dc.relation.issn2041-1723
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.othergaas quantum doteng
dc.subject.othergalliumeng
dc.subject.otherquantum doteng
dc.subject.otherunclassified drugeng
dc.subject.otherlight attenuationeng
dc.subject.otherperformance assessmenteng
dc.subject.otherpolarizationeng
dc.subject.otherquantum mechanicseng
dc.subject.othersemiconductor industryeng
dc.subject.otherArticleeng
dc.subject.otheratomic force microscopyeng
dc.subject.othercomparative studyeng
dc.subject.othercontrolled studyeng
dc.subject.othermeasurementeng
dc.subject.otheroscillationeng
dc.subject.otherphononeng
dc.subject.otherphotoneng
dc.subject.otherpolarizationeng
dc.subject.othersemiconductoreng
dc.subject.othersolid stateeng
dc.titleHighly indistinguishable and strongly entangled photons from symmetric GaAs quantum dotseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorIFWDeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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