Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots
dc.bibliographicCitation.firstPage | 15506 | eng |
dc.bibliographicCitation.journalTitle | Nature Communications | eng |
dc.bibliographicCitation.lastPage | 2198 | eng |
dc.bibliographicCitation.volume | 8 | eng |
dc.contributor.author | Huber, D. | |
dc.contributor.author | Reindl, M. | |
dc.contributor.author | Huo, Y. | |
dc.contributor.author | Huang, H. | |
dc.contributor.author | Wildmann, J.S. | |
dc.contributor.author | Schmidt, O.G. | |
dc.contributor.author | Rastelli, A. | |
dc.contributor.author | Trotta, R. | |
dc.date.accessioned | 2020-07-20T06:05:23Z | |
dc.date.available | 2020-07-20T06:05:23Z | |
dc.date.issued | 2017 | |
dc.description.abstract | The development of scalable sources of non-classical light is fundamental to unlocking the technological potential of quantum photonics. Semiconductor quantum dots are emerging as near-optimal sources of indistinguishable single photons. However, their performance as sources of entangled-photon pairs are still modest compared to parametric down converters. Photons emitted from conventional Stranski-Krastanov InGaAs quantum dots have shown non-optimal levels of entanglement and indistinguishability. For quantum networks, both criteria must be met simultaneously. Here, we show that this is possible with a system that has received limited attention so far: GaAs quantum dots. They can emit triggered polarization-entangled photons with high purity (g (2) (0) = 0.002±0.002), high indistinguishability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity (0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dot entanglement sources in future quantum technologies. | eng |
dc.description.fonds | Leibniz_Fonds | |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://doi.org/10.34657/3693 | |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/5064 | |
dc.language.iso | eng | eng |
dc.publisher | London : Nature Publishing Group | eng |
dc.relation.doi | https://doi.org/10.1038/ncomms15506 | |
dc.relation.issn | 2041-1723 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject.ddc | 530 | eng |
dc.subject.other | gaas quantum dot | eng |
dc.subject.other | gallium | eng |
dc.subject.other | quantum dot | eng |
dc.subject.other | unclassified drug | eng |
dc.subject.other | light attenuation | eng |
dc.subject.other | performance assessment | eng |
dc.subject.other | polarization | eng |
dc.subject.other | quantum mechanics | eng |
dc.subject.other | semiconductor industry | eng |
dc.subject.other | Article | eng |
dc.subject.other | atomic force microscopy | eng |
dc.subject.other | comparative study | eng |
dc.subject.other | controlled study | eng |
dc.subject.other | measurement | eng |
dc.subject.other | oscillation | eng |
dc.subject.other | phonon | eng |
dc.subject.other | photon | eng |
dc.subject.other | polarization | eng |
dc.subject.other | semiconductor | eng |
dc.subject.other | solid state | eng |
dc.title | Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | IFWD | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
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