Gradient structure for optoelectronic models of semiconductors

We derive an optoelectronic model based on a gradient formulation for the relaxation of electron-, hole- and photon- densities to their equilibrium state. This leads to a coupled system of partial and ordinary differential equations, for which we discuss the isothermal and the non-isothermal scenario separately.

Keywords

Gradient flow, optoelectronic semiconductor model, dual dissipation potential, reactiondiffusion systems

URI

https://doi.org/10.34657/2465
https://oa.tib.eu/renate/handle/123456789/3322

Citation

Mielke, A., Peschka, D., Rotundo, N., & Thomas, M. (2016). Gradient structure for optoelectronic models of semiconductors (Vol. 2317). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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Mathematik

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