Low resistance n-contact for UVC LEDs by a two-step plasma etching process
dc.bibliographicCitation.firstPage | 95019 | eng |
dc.bibliographicCitation.issue | 9 | eng |
dc.bibliographicCitation.volume | 35 | eng |
dc.contributor.author | Cho, H.K. | |
dc.contributor.author | Kang, J.H. | |
dc.contributor.author | Sulmoni, L. | |
dc.contributor.author | Kunkel, K. | |
dc.contributor.author | Rass, J. | |
dc.contributor.author | Susilo, N. | |
dc.contributor.author | Wernicke, T. | |
dc.contributor.author | Einfeldt, S. | |
dc.contributor.author | Kneissl, M. | |
dc.date.accessioned | 2021-08-18T12:34:24Z | |
dc.date.available | 2021-08-18T12:34:24Z | |
dc.date.issued | 2020 | |
dc.description.abstract | The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etching process with a first rapid etching using BCl3/Cl2 gas mixture and a second slow etching step using pure Cl2 gas has been developed. The etching sequence provides smooth mesa side-walls and an n-AlGaN surface with reduced surface damage. Ohmic n-contacts with a contact resistivity of 3.5 10-4 Ωcm2 are obtained on Si-doped Al0.65Ga0.35N layers and the operating voltages of the UVC LEDs were reduced by 2 V for a current of 20 mA. © 2020 The Author(s). Published by IOP Publishing Ltd. | eng |
dc.description.sponsorship | Leibniz_Fonds | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/6506 | |
dc.identifier.uri | https://doi.org/10.34657/5553 | |
dc.language.iso | eng | eng |
dc.publisher | Bristol : IOP Publ. | eng |
dc.relation.doi | https://doi.org/10.1088/1361-6641/ab9ea7 | |
dc.relation.essn | 1361-6641 | |
dc.relation.ispartofseries | Semiconductor science and technology : devoted exclusively to semiconductor research and applications 35 (2020), Nr. 9 | eng |
dc.relation.issn | 0268-1242 | |
dc.rights.license | CC BY 4.0 Unported | eng |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | eng |
dc.subject | high Almole fraction n-AlGaN | eng |
dc.subject | light emitting diode | eng |
dc.subject | low resistance n-contact | eng |
dc.subject | ohmic contact | eng |
dc.subject | operating voltage | eng |
dc.subject | plasma etch | eng |
dc.subject.ddc | 530 | eng |
dc.title | Low resistance n-contact for UVC LEDs by a two-step plasma etching process | eng |
dc.type | article | eng |
dc.type | Text | eng |
dcterms.bibliographicCitation.journalTitle | Semiconductor science and technology : devoted exclusively to semiconductor research and applications | eng |
tib.accessRights | openAccess | eng |
wgl.contributor | FBH | eng |
wgl.subject | Physik | eng |
wgl.type | Zeitschriftenartikel | eng |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Low resistance n-contact for UVC LEDs by a two-step plasma etching process.pdf
- Size:
- 1.21 MB
- Format:
- Adobe Portable Document Format
- Description: