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search.filters.applied.f.access: openAccess × Author: Ehrhardt, M. × DDC: 530 × Has files: Yes × Publisher: Amsterdam [u.a.] : Elsevier × Subject: Konferenzschrift ×

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    Laser structuring of thin layers for flexible electronics by a shock wave-induced delamination process
    (Amsterdam [u.a.] : Elsevier, 2014) Lorenz, P.; Ehrhardt, M.; Zimmer, K.
    The defect-free laser-assisted structuring of thin films on flexible substrates is a challenge for laser methods. However, solving this problem exhibits an outstanding potential for a pioneering development of flexible electronics. Thereby, the laser-assisted delamination method has a great application potential. At the delamination process: the localized removal of the layer is induced by a shock wave which is produced by a laser ablation process on the rear side of the substrate. In this study, the thin-film patterning process is investigated for different polymer substrates dependent on the material and laser parameters using a KrF excimer laser. The resultant structures were studied by optical microscopy and white light interferometry (WLI). The delamination process was tested at different samples (indium tin oxide (ITO) on polyethylene terephthalate (PET), epoxy-based negative photoresist (SU8) on polyimide (PI) and indium tin oxide/copper indium gallium selenide/molybdenum (ITO/CIGS/Mo) on PI.
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    In-process evaluation of electrical properties of CIGS solar cells scribed with laser pulses of different pulse lengths
    (Amsterdam [u.a.] : Elsevier, 2014) Zimmer, K.; Wang, X.; Lorenz, P.; Bayer, L.; Ehrhardt, M.; Scheit, C.; Braun, A.
    The optimization of laser scribing for the interconnection of CIGS solar cells is a current focus of laser process development. In addition to the geometry of the laser scribes the impact of the laser patterning to the electrical properties of the solar cells has to be optimized with regards to the scribing process and the laser sources. In-process measurements provide an approach for reliable evaluation of the electrical characteristics. In particular, the parallel resistance Rp that was calculated from the measured I-V curves was measured in dependence on the scribing parameters of a short-pulsed ns laser in comparison to a standard ps laser at a wavelength of 1.06 μm. With low pulse overlap of ∼ 20% a reduction of Rp to 2/3 of the initial value has been achieved for ns laser pulses. In comparison to ps laser slightly more defects were observed at the investigated parameter range.