2014, Bogusz, A., Müller, A.D., Blaschke, D., Skorupa, I., Bürger, D., Scholz, A., Schmidt, O.G., Schmidt, H.

We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

2020, Melzer, M., Makarov, D., Schmidt, O.G.

The current establishment of stretchable electronics to form a seamless link between soft or even living materials and the digital world is at the forefront of multidisciplinary research efforts, bridging physics, engineering and materials science. Magnetic functionalities can provide a sense of displacement, orientation or proximity to this novel formulation of electronics. This work reviews the recent development of stretchable magnetic field sensorics relying on the combination of metallic thin films revealing a giant magnetoresistance effect with elastomeric materials. Stretchability of the magnetic nanomembranes is achieved by specific morphologic features (e.g. wrinkles or microcracks), which accommodate the applied tensile deformation while maintaining the electrical and magnetic integrity of the sensor device. The entire development, from the demonstration of the world's first elastically stretchable magnetic sensor to the realization of a technology platform for robust, ready-to-use elastic magnetosensorics is described. Soft giant magnetoresistive elements exhibiting the same sensing performance as on conventional rigid supports, but with fully strain invariant properties up to 270% stretching have been demonstrated. With their unique mechanical properties, these sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. Stretchable magnetoelectronic sensors can equip soft and epidermal electronic systems with navigation, orientation, motion tracking and touchless control capabilities. A variety of novel technologies, like electronic skins, smart textiles, soft robotics and actuators, active medical implants and soft consumer electronics will benefit from these new magnetic functionalities. © 2019 IOP Publishing Ltd.

2018, Yuan, X., Weyhausen-Brinkmann, F., Martín-Sánchez, J., Piredda, G., Křápek, V., Huo, Y., Huang, H., Schimpf, C., Schmidt, O.G., Edlinger, J., Bester, G., Trotta, R., Rastelli, A.

The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices, but not for planar photonic circuits because of the poorly controlled orientation of the transition dipoles in the growth plane. Here we show that the quantization axis of gallium arsenide dots can be flipped into the growth plane via moderate in-plane uniaxial stress. By using piezoelectric strain-actuators featuring strain amplification, we study the evolution of the selection rules and excitonic fine structure in a regime, in which quantum confinement can be regarded as a perturbation compared to strain in determining the symmetry-properties of the system. The experimental and computational results suggest that uniaxial stress may be the right tool to obtain quantum-light sources with ideally oriented transition dipoles and enhanced oscillator strengths for integrated quantum photonics.

2012, Plumhof, J.D., Trotta, R., Rastelli, A., Schmidt, O.G.

Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states.

2019, Li, F., Wang, J., Liu, L., Qu, J., Li, Y., Bandari, V.K., Karnaushenko, D., Becker, C., Faghih, M., Kang, T., Baunack, S., Zhu, M., Zhu, F., Schmidt, O.G.

The rapid development of microelectronics has equally rapidly increased the demand for miniaturized energy storage devices. On-chip microsupercapacitors (MSCs), as promising power candidates, possess great potential to complement or replace electrolytic capacitors and microbatteries in various applications. However, the areal capacities and energy densities of the planar MSCs are commonly limited by the low voltage window, the thin layer of the electrode materials and complex fabrication processes. Here, a new-type three-dimensional (3D) tubular asymmetric MSC with small footprint area, high potential window, ultrahigh areal energy density, and long-term cycling stability is fabricated with shapeable materials and photolithographic technologies, which are compatible with modern microelectronic fabrication procedures widely used in industry. Benefiting from the novel architecture, the 3D asymmetric MSC displays an ultrahigh areal capacitance of 88.6 mF cm−2 and areal energy density of 28.69 mW h cm−2, superior to most reported interdigitated MSCs. Furthermore, the 3D tubular MSCs demonstrate remarkable cycling stability and the capacitance retention is up to 91.8% over 12 000 cycles. It is believed that the efficient fabrication methodology can be used to construct various integratable microscale tubular energy storage devices with small footprint area and high performance for miniaturized electronics.

2019, Gabler, F., Karnaushenko, D.D., Karnaushenko, D., Schmidt, O.G.

Self-assembly of two-dimensional patterned nanomembranes into three-dimensional micro-architectures has been considered a powerful approach for parallel and scalable manufacturing of the next generation of micro-electronic devices. However, the formation pathway towards the final geometry into which two-dimensional nanomembranes can transform depends on many available degrees of freedom and is plagued by structural inaccuracies. Especially for high-aspect-ratio nanomembranes, the potential energy landscape gives way to a manifold of complex pathways towards misassembly. Therefore, the self-assembly yield and device quality remain low and cannot compete with state-of-the art technologies. Here we present an alternative approach for the assembly of high-aspect-ratio nanomembranes into microelectronic devices with unprecedented control by remotely programming their assembly behavior under the influence of external magnetic fields. This form of magnetic Origami creates micro energy storage devices with excellent performance and high yield unleashing the full potential of magnetic field assisted assembly for on-chip manufacturing processes.

2012, Rodriguez, R.D., Sheremet, E., Thurmer, D.J., Lehmann, D., Gordan, O.D., Seidel, F., Milekhin, A., Schmidt, O.G., Hietschold, M., Zahn, D.R.T.

Large arrays of multifunctional rolled-up semiconductors can be mass-produced with precisely controlled size and composition, making them of great technological interest for micro- and nano-scale device fabrication. The microtube behavior at different temperatures is a key factor towards further engineering their functionality, as well as for characterizing strain, defects, and temperature-dependent properties of the structures. For this purpose, we probe optical phonons of GaAs/InGaAs rolled-up microtubes using Raman spectroscopy on defect-rich (faulty) and defect-free microtubes. The microtubes are fabricated by selectively etching an AlAs sacrificial layer in order to release the strained InGaAs/GaAs bilayer, all grown by molecular beam epitaxy. Pristine microtubes show homogeneity of the GaAs and InGaAs peak positions and intensities along the tube, which indicates a defect-free rolling up process, while for a cone-like microtube, a downward shift of the GaAs LO phonon peak along the cone is observed. Formation of other type of defects, including partially unfolded microtubes, can also be related to a high Raman intensity of the TO phonon in GaAs. We argue that the appearance of the TO phonon mode is a consequence of further relaxation of the selection rules due to the defects on the tubes, which makes this phonon useful for failure detection/prediction in such rolled up systems. In order to systematically characterize the temperature stability of the rolled up microtubes, Raman spectra were acquired as a function of sample temperature up to 300°C. The reversibility of the changes in the Raman spectra of the tubes within this temperature range is demonstrated.

2019, Höfer, B., Olbrich, F., Kettler, J., Paul, M., Höschele, J., Jetter, M., Portalupi, S.L., Ding, F., Michler, P., Schmidt, O.G.

We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum emitters, enables us to tune the quantum dot emission wavelengths and their fine-structure splitting. By spectrally analyzing the emitted light with respect to its polarization, we are able to demonstrate the cancelation of the fine structure splitting within the experimental resolution limit. This work represents an important step towards the high-yield generation of entangled photon pairs at telecommunication wavelength, together with the capability to precisely tune the emission to target wavelengths.

2008, Wang, L., Rastelli, A., Kiravittaya, S., Atkinson, P., Ding, F., Bof Bufon, C.C., Hermannstädter, C., Witzany, M., Beirne, G.J., Michler, P., Schmidt, O.G.

We report on the fabrication, detailed characterization and modeling of lateral InGaAs quantum dot molecules (QDMs) embedded in a GaAs matrix and we discuss strategies to fully control their spatial configuration and electronic properties. The three-dimensional morphology of encapsulated QDMs was revealed by selective wet chemical etching of the GaAs top capping layer and subsequent imaging by atomic force microscopy (AFM). The AFM investigation showed that different overgrowth procedures have a profound consequence on the QDM height and shape. QDMs partially capped and annealed in situ for micro- photoluminescence spectroscopy consist of shallow but well-defined quantum dots (QDs) in contrast to misleading results usually provided by surface morphology measurements when they are buried by a thin GaAs layer. This uncapping approach is crucial for determining the QDM structural parameters, which are required for modeling the system. A single-band effective-mass approximation is employed to calculate the confined electron and heavy-hole energy levels, taking the geometry and structural information extracted from the uncapping experiments as inputs. The calculated transition energy of the single QDM shows good agreement with the experimentally observed values. By decreasing the edge-to-edge distance between the two QDs within a QDM, a splitting of the electron (hole) wavefunction into symmetric and antisymmetric states is observed, indicating the presence of lateral coupling. Site control of such lateral QDMs obtained by growth on a pre-patterned substrate, combined with a technology to fabricate gate structures at well-defined positions with respect to the QDMs, could lead to deterministically controlled devices based on QDMs. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.

2012, Picco, A., Bonera, E., Pezzoli, F., Grilli, E., Schmidt, O.G., Isa, F., Cecchi, S., Guzzi, M.

In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.