2018, Kayser, S., Lüdge, A., Böttcher, K.

The major task for the Lateral-Photovoltage-Scanning-Method is to detect doping striations and the shape of the solid-liquid-interface of an indirect semiconductor crystal. This method is sensitive to the gradient of the charge carrier density. Attempting to simulate the signal generation of the LPS-Method, we are using a three dimensional Finite Volume approach for solving the van Roosbroeck equations with COMSOL Multiphysics in a silicon sample. We show that the simulated LPS-voltage is directly proportional to the gradient of a given doping distribution, which is also the case for the measured LPS-voltage.

2003, Siche, D., Rost, H.-J., Schulz, D., Wollweber, J., Freiberg, A., Schäbitz, K., Lux, B., Wurche, T., Böttcher, K., Doerschel, J., Irmscher, K., Alex, V., Wagner, G.

[no abstract available]