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    Influence of the carrier reservoir dimensionality on electron-electron scattering in quantum dot materials
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Wilms, Alexander; Mathé, Peter; Schulze, Franz; Koprucki, Thomas; Knorr, Andreas; Bandelow, Uwe
    We calculated Coulomb scattering rates from quantum dots (QDs) coupled to a 2D carrier reservoir and QDs coupled to a 3D reservoir. For this purpose, we used a microscopic theory in the limit of Born-Markov approximation, in which the numerical evaluation of high dimensional integrals is done via a quasi-Monte Carlo method. Via a comparison of the so determined scattering rates, we investigated the question whether scattering from 2D is generally more efficient than scattering from 3D. In agreement with experimental findings, we did not observe a significant reduction of the scattering efficiency of a QD directly coupled to a 3D reservoir. In turn, we found that 3D scattering benefits from it’s additional degree of freedom in the momentum space
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    Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Koprucki, Thomas; Wilms, Alexander; Knorr, Andreas; Bandelow, Uwe
    We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20