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Author: Bandelow, Uwe × Author: Koprucki, Thomas × End date: 2019 × Start date: 2019 × End date: 2019 × Start date: 2010 × Has files: Yes × Type: Report × Type: Text × WGL Institute: WIAS ×

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    Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Radziunas, Mindaugas; Fuhrmann, Jürgen; Zeghuzi, Anissa; Wünsche, Hans-Jürgen; Koprucki, Thomas; Brée, Carsten; Wenzel, Hans; Bandelow, Uwe
    In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step.
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    Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Radziunas, Mindaugas; Zeghuzi, Anissa; Fuhrmann, Jürgen; Koprucki, Thomas; Wünsche, Hans-Jürgen; Wenzel, Hans; Bandelow, Uwe
    We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edgeemitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
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    Influence of the carrier reservoir dimensionality on electron-electron scattering in quantum dot materials
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Wilms, Alexander; Mathé, Peter; Schulze, Franz; Koprucki, Thomas; Knorr, Andreas; Bandelow, Uwe
    We calculated Coulomb scattering rates from quantum dots (QDs) coupled to a 2D carrier reservoir and QDs coupled to a 3D reservoir. For this purpose, we used a microscopic theory in the limit of Born-Markov approximation, in which the numerical evaluation of high dimensional integrals is done via a quasi-Monte Carlo method. Via a comparison of the so determined scattering rates, we investigated the question whether scattering from 2D is generally more efficient than scattering from 3D. In agreement with experimental findings, we did not observe a significant reduction of the scattering efficiency of a QD directly coupled to a 3D reservoir. In turn, we found that 3D scattering benefits from it’s additional degree of freedom in the momentum space
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    Modeling of quantum dot lasers with microscopic treatment of Coulomb effects
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Koprucki, Thomas; Wilms, Alexander; Knorr, Andreas; Bandelow, Uwe
    We present a spatially resolved semiclassical model for the simulation of semiconductor quantum-dot lasers including a multi-species description for the carriers along the optical active region. The model links microscopic determined quantities like scattering rates and dephasing times, that essentially depend via Coulomb interaction on the carrier densities, with macroscopic transport equations and equations for the optical field.78A60 68U2078A60 68U20