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Author: Botey, Muriel × Author: Radziunas, Mindaugas × End date: 2019 × Start date: 2010 × DDC: 510 × WGL Institute: WIAS ×

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Now showing 1 - 3 of 3
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    Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Radziunas, Mindaugas; Herrero, Ramon; Botey, Muriel; Staliunas, Kestutis
    We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.
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    Simulations and analysis of beam quality improvement in spatially modulated broad area edge-emitting devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, Mindaugas; Herrero, Ramon; Botey, Muriel; Staliunas, Kestutis
    We simulate and analyze how beam quality improves while being amplified in edge emitting broad area semiconductor amplifiers with a periodic structuring of the electrical contacts, in both longitudinal and lateral directions. A spatio-temporal traveling wave model is used for simulations of the dynamics and nonlinear interactions of the optical fields, induced polarizations and carrier density. In the case of small beam amplification, the optical field can be expanded into few Bloch modes, so that the system is described by a set of ODEs for the evolution of the mode amplitudes. The analysis of such model provides a deep understanding of the impact of the different parameters on amplification and on spatial (angular) filtering of the beam. It is shown that under realistic parameters the twodimensional modulation of the current can lead not only to a significant reduction of the emission divergence, but also to an additional amplification of the emitted field.
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    Beam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Botey, Muriel; Herrero, Ramon; Staliunas, Kestutis
    We investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.