Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers

We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.

Keywords

Semiconductor amplifier, traveling wave model, coupled mode approach, periodic structure, anisotropy, far field, spatial filtering

URI

https://doi.org/10.34657/2698
https://oa.tib.eu/renate/handle/123456789/2919

Citation

Radziunas, M., Herrero, R., Botey, M., & Staliunas, K. (2015). Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers (Vol. 2088). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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Mathematik

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