Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers

We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.

URI

https://doi.org/10.34657/2698
https://oa.tib.eu/renate/handle/123456789/2919

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Mathematik
WIAS Preprints

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