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Numerical study of the systematic error in Monte Carlo schemes for semiconductors

2008, Muscato, Orazio, Di Stefano, Vincenza, Wagner, Wolfgang

The paper studies the convergence behavior of Monte Carlo schemes for semiconductors. A detailed analysis of the systematic error with respect to numerical parameters is performed. Different sources of systematic error are pointed out and illustrated in a spatially one-dimensional test case. The error with respect to the number of simulation particles occurs during the calculation of the internal electric field. The time step error, which is related to the splitting of transport and electric field calculations, vanishes sufficiently fast. The error due to the approximation of the trajectories of particles depends on the ODE solver used in the algorithm. It is negligible compared to the other sources of time step error, when a second order Runge-Kutta solver is used. The error related to the approximate scattering mechanism is the most significant source of error with respect to the time step.

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A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

2012, Muscato, Orazio, Di Stefano, Vincenza, Wagner, Wolfgang

This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.

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Properties of the steady state distribution of electrons in semiconductors

2010, Muscato, Orazio, Wagner, Wolfgang, Di Stefano, Vincenza

This paper studies a Boltzmann transport equation with several electron-phonon scattering mechanisms, which describes the charge transport in semiconductors. The electric field is coupled to the electron distribution function via Poisson's equation. Both the parabolic and the quasi-parabolic band approximations are considered. The steady state behaviour of the electron distribution function is investigated by a Monte Carlo algorithm. More precisely, several nonlinear functionals of the solution are calculated that quantify the deviation of the steady state from a Maxwellian distribution with respect to the wave-vector. On the one hand, the numerical results illustrate known theoretical statements about the steady state and indicate possible directions for future studies. On the other hand, the nonlinear functionals provide tools that can be used in the framework of Monte Carlo algorithms for detecting regions in which the steady state distribution has a relatively simple structure, thus providing a basis for domain decomposition methods