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Author: Förster, Tobias × DDC: 620 ×

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    Improved accuracy in high-frequency AC transport measurements in pulsed high magnetic fields
    ([S.l.] : American Institute of Physics, 2020) Mitamura, Hiroyuki; Watanuki, Ryuta; Kampert, Erik; Förster, Tobias; Matsuo, Akira; Onimaru, Takahiro; Onozaki, Norimichi; Amou, Yuta; Wakiya, Kazuhei; Yamamoto, Isao; Matsumoto, Keisuke T.; Suzuki, Kazuya; Zherlitsyn, Sergei; Wosnitza, Joachim; Tokunaga, Masashi; Kindo, Koichi; Sakakibara, Toshiro
    We show theoretically and experimentally that accurate transport measurements are possible even within the short time provided by pulsed magnetic fields. For this purpose, a new method has been devised, which removes the noise component of a specific frequency from the signal by taking a linear combination of the results of numerical phase detection using multiple integer periods. We also established a method to unambiguously determine the phase rotation angle in AC transport measurements using a frequency range of tens of kilohertz. We revealed that the dominant noise in low-frequency transport measurements in pulsed magnetic fields is the electromagnetic induction caused by mechanical vibrations of wire loops in inhomogeneous magnetic fields. These results strongly suggest that accurate transport measurements in short-pulsed magnets are possible when mechanical vibrations are well suppressed. © 2020 Author(s).
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    High field superconducting properties of Ba(Fe1-xCox)2As2 thin films
    (London : Nature Publishing Group, 2015) Hänisch, Jens; Iida, Kazumasa; Kurth, Fritz; Reich, Elke; Tarantini, Chiara; Jaroszynski, Jan; Förster, Tobias; Fuchs, Günther; Hühne, Ruben; Grinenko, Vadim; Schultz, Ludwig; Holzapfel, Bernhard
    The film investigated grew phase-pure and highly textured with in-plane and out-of-plane full width at half maximum, FWHM, of = 0.74° and = 0.9°, Suppl. S1. The sample, however, does contain a large density of ab-planar defects, as revealed by transition electron microscope (TEM) images of focused ion beam (FIB) cuts near the microbridges, Fig. 1. These defects are presumably stacking faults (i.e. missing FeAs layers)20. The reason for this defect formation (also observed on technical substrates)21 is not fully understood. Possible reasons are a partial As loss during deposition22, and relaxation processes in combination with the Fe buffer layer23. Estimating the distance between these intergrowths leads to values varying between 5 and 10 nm. Between the planar defects, an orientation contrast is visible in TEM (inset Fig. 1b), i.e. the brighter crystallites are slightly rotated either around (010) (out-of-plane spread, ) or around (001) (in-plane spread, ) and enclosed by dislocation networks or small-angle GBs. Since the crystallites are sandwiched between planar defects, an in-plane misorientation is most likely. The out-of-plane misorientation, on the other hand, is visible as a slight tilt of the ab-planar defects with respect to each other, especially in the upper part of the sample. No globular or columnar precipitates were found.