4 results
Search Results
Now showing 1 - 4 of 4
- ItemThe influence of the in-plane lattice constant on the superconducting transition temperature of FeSe0.7Te0.3 thin films(New York : American Institute of Physics, 2017) Yuan, Feifei; Iida, Kazumasa; Grinenko, Vadim; Chekhonin, Paul; Pukenas, Aurimas; Skrotzki, Werner; Sakoda, Masahito; Naito, Michio; Sala, Alberto; Putti, Marina; Yamashita, Aichi; Takano, Yoshihiko; Shi, Zhixiang; Nielsch, Kornelius; Hühne, RubenEpitaxial Fe(Se,Te) thin films were prepared by pulsed laser deposition on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT), CaF2-buffered LSAT and bare CaF2 substrates, which exhibit an almost identical in-plane lattice parameter. The composition of all Fe(Se,Te) films were determined to be FeSe0.7Te0.3 by energy dispersive X-ray spectroscopy, irrespective of the substrate. Albeit the lattice parameters of all templates have comparable values, the in-plane lattice parameter of the FeSe0.7Te0.3 films varies significantly. We found that the superconducting transition temperature (Tc) of FeSe0.7Te0.3 thin films is strongly correlated with their a-axis lattice parameter. The highest Tc of over 19 K was observed for the film on bare CaF2 substrate, which is related to unexpectedly large in-plane compressive strain originating mostly from the thermal expansion mismatch between the FeSe0.7Te0.3 film and the substrate.
- ItemHigh field superconducting properties of Ba(Fe1-xCox)2As2 thin films(London : Nature Publishing Group, 2015) Hänisch, Jens; Iida, Kazumasa; Kurth, Fritz; Reich, Elke; Tarantini, Chiara; Jaroszynski, Jan; Förster, Tobias; Fuchs, Günther; Hühne, Ruben; Grinenko, Vadim; Schultz, Ludwig; Holzapfel, BernhardThe film investigated grew phase-pure and highly textured with in-plane and out-of-plane full width at half maximum, FWHM, of = 0.74° and = 0.9°, Suppl. S1. The sample, however, does contain a large density of ab-planar defects, as revealed by transition electron microscope (TEM) images of focused ion beam (FIB) cuts near the microbridges, Fig. 1. These defects are presumably stacking faults (i.e. missing FeAs layers)20. The reason for this defect formation (also observed on technical substrates)21 is not fully understood. Possible reasons are a partial As loss during deposition22, and relaxation processes in combination with the Fe buffer layer23. Estimating the distance between these intergrowths leads to values varying between 5 and 10 nm. Between the planar defects, an orientation contrast is visible in TEM (inset Fig. 1b), i.e. the brighter crystallites are slightly rotated either around (010) (out-of-plane spread, ) or around (001) (in-plane spread, ) and enclosed by dislocation networks or small-angle GBs. Since the crystallites are sandwiched between planar defects, an in-plane misorientation is most likely. The out-of-plane misorientation, on the other hand, is visible as a slight tilt of the ab-planar defects with respect to each other, especially in the upper part of the sample. No globular or columnar precipitates were found.
- ItemPiezoelectric-driven uniaxial pressure cell for muon spin relaxation and neutron scattering experiments([S.l.] : American Institute of Physics, 2020) Ghosh, Shreenanda; Brückner, Felix; Nikitin, Artem; Grinenko, Vadim; Elender, Matthias; Mackenzie, Andrew P.; Luetkens, Hubertus; Klauss, Hans-Henning; Hicks, Clifford W.We present a piezoelectric-driven uniaxial pressure cell that is optimized for muon spin relaxation and neutron scattering experiments and that is operable over a wide temperature range including cryogenic temperatures. To accommodate the large samples required for these measurement techniques, the cell is designed to generate forces up to ∼1000 N. To minimize the background signal, the space around the sample is kept as open as possible. We demonstrate here that by mounting plate-like samples with epoxy, a uniaxial stress exceeding 1 GPa can be achieved in an active volume of at least 5 mm3. We show that for practical operation, it is important to monitor both the force and displacement applied to the sample. In addition, because time is critical during facility experiments, samples are mounted in detachable holders that can be rapidly exchanged. The piezoelectric actuators are likewise contained in an exchangeable cartridge. © 2020 Author(s).
- ItemHall-plot of the phase diagram for Ba(Fe1−xCox)2As2(London : Nature Publishing Group, 2016) Iida, Kazumasa; Grinenko, Vadim; Kurth, Fritz; Ichinose, Ataru; Tsukada, Ichiro; Ahrens, Eike; Pukenas, Aurimas; Chekhonin, Paul; Skrotzki, Werner; Teresiak, Angelika; Hühne, Ruben; Aswartham, Saicharan; Wurmehl, Sabine; Erbe, Manuela; Hänisch, Jens; Holzapfel, Bernhard; Drechsler, Stefan-Ludwig; Efremov, Dmitri V.The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1−xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.