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- ItemKLaF4 nanocrystallisation in oxyfluoride glass-ceramics(Cambridge : RSC, 2013) De Pablos-Martín, A.; Muñoz, F.; Mather, G.C.; Patzig, C.; Bhattacharyya, S.; Jinschek, J.R.; Höche, T.; Durán, A.; Pascual, M.J.Nanocrystallisation of the cubic and hexagonal polymorphs of KLaF 4 in a 70SiO2-7Al2O3-16K 2O-7LaF3 (mol%) glass has been achieved by heat treatment above the glass transition temperature. For treatment at 580°C, only the cubic structure crystallises, with a maximum crystallite size of ~9 nm. At higher temperatures, crystallisation of the hexagonal structure also takes place. The crystallisation process has been analysed using several thermal and structural techniques and is revealed to occur from a constant number of nuclei. The formation of a viscous barrier which inhibits further crystal growth and limits the crystal size to the nanometric range is observed. The title materials doped with lanthanide ions may be good candidates for optical applications.
- ItemPhenomenology of iron-assisted ion beam pattern formation on Si(001)(Bristol : IOP, 2011) MacKo, S.; Frost, F.; Engler, M.; Hirsch, D.; Höche, T.; Grenzer, J.; Michely, T.Pattern formation on Si(001) through 2 keV Kr+ ion beam erosion of Si(001) at an incident angle of # = 30° and in the presence of sputter codeposition or co-evaporation of Fe is investigated by using in situ scanning tunneling microscopy, ex situ atomic force microscopy and electron microscopy. The phenomenology of pattern formation is presented, and experiments are conducted to rule out or determine the processes of relevance in ion beam pattern formation on Si(001) with impurities. Special attention is given to the determination of morphological phase boundaries and their origin. Height fluctuations, local flux variations, induced chemical inhomogeneities, silicide formation and ensuing composition-dependent sputtering are found to be of relevance for pattern formation.