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A high resolution extreme ultraviolet spectrometer system optimized for harmonic spectroscopy and XUV beam analysis

2019, Wünsche, Martin, Fuchs, Silvio, Weber, Thomas, Nathanael, Jan, Abel, Johann J., Reinhard, Julius, Wiesner, Felix, Hübner, Uwe, Skruszewicz, Slawomir J., Paulus, Gerhard G., Rödel, Christian

We present a modular extreme ultraviolet (XUV) spectrometer system optimized for a broad spectral range of 12-41 nm (30-99 eV) with a high spectral resolution of λ/Δλ 784 ± 89. The spectrometer system has several operation modes for (1) XUV beam inspection, (2) angular spectral analysis, and (3) imaging spectroscopy. These options allow for a versatile use in high harmonic spectroscopy and XUV beam analysis. The high performance of the spectrometer is demonstrated using a novel cross-sectional imaging method called XUV coherence tomography. © 2019 Author(s).

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Absolute EUV reflectivity measurements using a broadband high-harmonic source and an in situ single exposure reference scheme

2022, Abel, Johann J., Wiesner, Felix, Nathanael, Jan, Reinhard, Julius, Wünsche, Martin, Schmidl, Gabriele, Gawlik, Annett, Hübner, Uwe, Plentz, Jonathan, Rödel, Christian, Paulus, Gerhard G., Fuchs, Silvio

We present a tabletop setup for extreme ultraviolet (EUV) reflection spectroscopy in the spectral range from 40 to 100 eV by using high-harmonic radiation. The simultaneous measurements of reference and sample spectra with high energy resolution provide precise and robust absolute reflectivity measurements, even when operating with spectrally fluctuating EUV sources. The stability and sensitivity of EUV reflectivity measurements are crucial factors for many applications in attosecond science, EUV spectroscopy, and nano-scale tomography. We show that the accuracy and stability of our in situ referencing scheme are almost one order of magnitude better in comparison to subsequent reference measurements. We demonstrate the performance of the setup by reflective near-edge x-ray absorption fine structure measurements of the aluminum L2/3 absorption edge in α-Al2O3 and compare the results to synchrotron measurements.

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Laboratory setup for extreme ultraviolet coherence tomography driven by a high-harmonic source

2019, Nathanael, Jan, Wünsche, Martin, Fuchs, Silvio, Weber, Thomas, Abel, Johann J., Reinhard, Julius, Wiesner, Felix, Hübner, Uwe, Skruszewicz, Slawomir J., Paulus, Gerhard G., Rödel, Christian

We present a laboratory beamline dedicated to nanoscale subsurface imaging using extreme ultraviolet coherence tomography (XCT). In this setup, broad-bandwidth extreme ultraviolet (XUV) radiation is generated by a laser-driven high-harmonic source. The beamline is able to handle a spectral range of 30-130 eV and a beam divergence of 10 mrad (full width at half maximum). The XUV radiation is focused on the sample under investigation, and the broadband reflectivity is measured using an XUV spectrometer. For the given spectral window, the XCT beamline is particularly suited to investigate silicon-based nanostructured samples. Cross-sectional imaging of layered nanometer-scale samples can be routinely performed using the laboratory-scale XCT beamline. A depth resolution of 16 nm has been achieved using the spectral range of 36-98 eV which represents a 33% increase in resolution due to the broader spectral range compared to previous work. © 2019 Author(s).

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Characterization of encapsulated graphene layers using extreme ultraviolet coherence tomography

2022, Wiesner, Felix, Skruszewicz, Slawomir, Rödel, Christian, Abel, Johann Jakob, Reinhard, Julius, Wünsche, Martin, Nathanael, Jan, Grünewald, Marco, Hübner, Uwe, Paulus, Gerhard G., Fuchs, Silvio

Many applications of two-dimensional materials such as graphene require the encapsulation in bulk material. While a variety of methods exist for the structural and functional characterization of uncovered 2D materials, there is a need for methods that image encapsulated 2D materials as well as the surrounding matter. In this work, we use extreme ultraviolet coherence tomography to image graphene flakes buried beneath 200 nm of silicon. We show that we can identify mono-, bi-, and trilayers of graphene and quantify the thickness of the silicon bulk on top by measuring the depth-resolved reflectivity. Furthermore, we estimate the quality of the graphene interface by incorporating a model that includes the interface roughness. These results are verified by atomic force microscopy and prove that extreme ultraviolet coherence tomography is a suitable tool for imaging 2D materials embedded in bulk materials.