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Author: Hühne, Ruben × Subject: Characterization and analytical techniques ×

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    Purely antiferromagnetic magnetoelectric random access memory
    (London : Nature Publishing Group, 2017) Kosub, Tobias; Kopte, Martin; Hühne, Ruben; Appel, Patrick; Shields, Brendan; Maletinsky, Patrick; Hübner, René; Liedke, Maciej Oskar; Fassbender, Jürgen; Schmidt, Oliver G.; Makarov, Denys
    Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.
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    High field superconducting properties of Ba(Fe1-xCox)2As2 thin films
    (London : Nature Publishing Group, 2015) Hänisch, Jens; Iida, Kazumasa; Kurth, Fritz; Reich, Elke; Tarantini, Chiara; Jaroszynski, Jan; Förster, Tobias; Fuchs, Günther; Hühne, Ruben; Grinenko, Vadim; Schultz, Ludwig; Holzapfel, Bernhard
    The film investigated grew phase-pure and highly textured with in-plane and out-of-plane full width at half maximum, FWHM, of = 0.74° and = 0.9°, Suppl. S1. The sample, however, does contain a large density of ab-planar defects, as revealed by transition electron microscope (TEM) images of focused ion beam (FIB) cuts near the microbridges, Fig. 1. These defects are presumably stacking faults (i.e. missing FeAs layers)20. The reason for this defect formation (also observed on technical substrates)21 is not fully understood. Possible reasons are a partial As loss during deposition22, and relaxation processes in combination with the Fe buffer layer23. Estimating the distance between these intergrowths leads to values varying between 5 and 10 nm. Between the planar defects, an orientation contrast is visible in TEM (inset Fig. 1b), i.e. the brighter crystallites are slightly rotated either around (010) (out-of-plane spread, ) or around (001) (in-plane spread, ) and enclosed by dislocation networks or small-angle GBs. Since the crystallites are sandwiched between planar defects, an in-plane misorientation is most likely. The out-of-plane misorientation, on the other hand, is visible as a slight tilt of the ab-planar defects with respect to each other, especially in the upper part of the sample. No globular or columnar precipitates were found.