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- ItemBeam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Botey, Muriel; Herrero, Ramon; Staliunas, KestutisWe investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.
- ItemNarrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Radziunas, Mindaugas; Herrero, Ramon; Botey, Muriel; Staliunas, KestutisWe perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.