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Author: Leistner, K. Ă— Version: publishedVersion Ă—

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Now showing 1 - 5 of 5
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    Efficiency of Magnetostatic Protection Using Nanostructured Permalloy Shielding Coatings Depending on Their Microstructure
    (Basel : MDPI, 2021) Zubar, T.; Grabchikov, S.; Kotelnikova, A.; Kaniukov, E.; Kutuzau, M.; Leistner, K.; Nielsch, K.; Vershinina, T.; Tishkevich, D.; Kanafyev, O.; Kozlovskiy, A.; Zdorovets, M.; Fedosyuk, V.; Trukhanov, A.
    The effect of microstructure on the efficiency of shielding or shunting of the magnetic fluxby permalloy shields was investigated in the present work. For this purpose, the FeNi shieldingcoatings with different grain structures were obtained using stationary and pulsed electrodeposition.The coatings’ composition, crystal structure, surface microstructure, magnetic domain structure, andshielding efficiency were studied. It has been shown that coatings with 0.2–0.6μm grains have adisordered domain structure. Consequently, a higher value of the shielding efficiency was achieved,but the working range was too limited. The reason for this is probably the hindered movement of thedomain boundaries. Samples with nanosized grains have an ordered two-domain magnetic structurewith a permissible partial transition to a superparamagnetic state in regions with a grain size of lessthan 100 nm. The ordered magnetic structure, the small size of the domain, and the coexistenceof ferromagnetic and superparamagnetic regions, although they reduce the maximum value ofthe shielding efficiency, significantly expand the working range in the nanostructured permalloyshielding coatings. As a result, a dependence between the grain and domain structure and theefficiency of magnetostatic shielding was found.
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    Towards uniform electrochemical porosification of bulk HVPE-grown GaN
    (Pennington, NJ : Electrochemical Society Inc., 2019) Monaico, E.; Moise, C.; Mihai, G.; Ursaki, V.V.; Leistner, K.; Tiginyanu, I.M.; Enachescu, M.; Nielsch, K.
    In this paper, we report on results of a systematic study of porous morphologies obtained using anodization of HVPE-grown crystalline GaN wafers in HNO3, HCl, and NaCl solutions. The anodization-induced nanostructuring is found to proceed in different ways on N-and Ga-faces of polar GaN substrates. Complex pyramidal structures are disclosed and shown to be composed of regions with the degree of porosity modulated along the pyramid surface. Depending on the electrolyte and applied anodization voltage, formation of arrays of pores or nanowires has been evidenced near the N-face of the wafer. By adjusting the anodization voltage, we demonstrate that both current-line oriented pores and crystallographic pores are generated. In contrast to this, porosification of the Ga-face proceeds from some imperfections on the surface and develops in depth up to 50 ÎĽm, producing porous matrices with pores oriented perpendicularly to the wafer surface, the thickness of the pore walls being controlled by the applied voltage. The observed peculiarities are explained by different values of the electrical conductivity of the material near the two wafer surfaces.
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    Advances in magneto-ionic materials and perspectives for their application
    (College Park, MD : American Institute of Physics, 2021) Nichterwitz, M.; Honnali Sudheendra, S.; Kutuzau, M.; Guo, S.; Zehner, J.; Nielsch, K.; Leistner, K.
    The possibility of tuning magnetic material properties by ionic means is exciting both for basic science and, especially in view of the excellentenergy efficiency and room temperature operation, for potential applications. In this perspective, we shortly introduce the functionality ofmagneto-ionic materials and focus on important recent advances in this field. We present a comparative overview of state-of-the-art magneto-ionic materials considering the achieved magnetoelectric voltage coefficients for magnetization and coercivity and the demonstrated timescales for magneto-ionic switching. Furthermore, the application perspectives of magneto-ionic materials in data storage and computing,magnetic actuation, and sensing are evaluated. Finally, we propose potential research directions to push this field forward and tackle thechallenges related to future applications
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    Magnetoelectric materials, phenomena, and devices
    (College Park, MD : American Institute of Physics, 2021) Herrera Diez, L.; Kruk, R.; Leistner, K.; Sort, J.
    [no abstract available]
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    Research Update: Magnetoionic control of magnetization and anisotropy in layered oxide/metal heterostructures
    (New York : American Institute of Physics, 2016) Duschek, K.; Pohl, D.; Fähler, S.; Nielsch, K.; Leistner, K.
    Electric field control of magnetization and anisotropy in layered structures with perpendicular magnetic anisotropy is expected to increase the versatility of spintronic devices. As a model system for reversible voltage induced changes of magnetism by magnetoionic effects, we present several oxide/metal heterostructures polarized in an electrolyte. Room temperature magnetization of Fe-O/Fe layers can be changed by 64% when applying only a few volts in 1M KOH. In a next step, the bottom interface of the in-plane magnetized Fe layer is functionalized by an L10 FePt(001) underlayer exhibiting perpendicular magnetic anisotropy. During subsequent electrocrystallization and electrooxidation, well defined epitaxial Fe3O4/Fe/FePt heterostructures evolve. The application of different voltages leads to a thickness change of the Fe layer sandwiched between Fe-O and FePt. At the point of transition between rigid magnet and exchange spring magnet regime for the Fe/FePt bilayer, this induces a large variation of magnetic anisotropy.