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- ItemOptimal Entropy-Transport problems and a new Hellinger–Kantorovich distance between positive measures(Berlin ; Heidelberg : Springer, 2017) Liero, Matthias; Mielke, Alexander; Savaré, GiuseppeWe develop a full theory for the new class of Optimal Entropy-Transport problems between nonnegative and finite Radon measures in general topological spaces. These problems arise quite naturally by relaxing the marginal constraints typical of Optimal Transport problems: given a pair of finite measures (with possibly different total mass), one looks for minimizers of the sum of a linear transport functional and two convex entropy functionals, which quantify in some way the deviation of the marginals of the transport plan from the assigned measures. As a powerful application of this theory, we study the particular case of Logarithmic Entropy-Transport problems and introduce the new Hellinger–Kantorovich distance between measures in metric spaces. The striking connection between these two seemingly far topics allows for a deep analysis of the geometric properties of the new geodesic distance, which lies somehow between the well-known Hellinger–Kakutani and Kantorovich–Wasserstein distances.
- ItemOptimal Entropy-Transport problems and a new Hellinger-Kantorovich distance between positive measures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Liero, Matthias; Mielke, Alexander; Savaré, GiuseppeWe develop a full theory for the new class of Optimal Entropy-Transport problems between nonnegative and finite Radon measures in general topological spaces. They arise quite naturally by relaxing the marginal constraints typical of Optimal Transport problems: given a couple of finite measures (with possibly different total mass), one looks for minimizers of the sum of a linear transport functional and two convex entropy functionals, that quantify in some way the deviation of the marginals of the transport plan from the assigned measures. As a powerful application of this theory, we study the particular case of Logarithmic Entropy-Transport problems and introduce the new Hellinger-Kantorovich distance between measures in metric spaces. The striking connection between these two seemingly far topics allows for a deep analysis of the geometric properties of the new geodesic distance, which lies somehow between the well-known Hellinger-Kakutani and Kantorovich-Wasserstein distances.
- ItemHomogenization of Cahn-Hilliard-type equations via evolutionary Gamma-convergence(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Liero, Matthias; Reichelt, SinaIn this paper we discuss two approaches to evolutionary Gamma-convergence of gradient systems in Hilbert spaces. The formulation of the gradient system is based on two functionals, namely the energy functional and the dissipation potential, which allows us to employ Gamma-convergence methods. In the first approach we consider families of uniformly convex energy functionals such that the limit passage of the time-dependent problems can be based on the theory of evolutionary variational inequalities as developed by Daneri and Savare 2010. The second approach uses the equivalent formulation of the gradient system via the energy-dissipation principle and follows the ideas of Sandier and Serfaty 2004. We apply both approaches to rigorously derive homogenization limits for Cahn-Hilliard-type equations. Using the method of weak and strong two-scale convergence via periodic unfolding, we show that the energy and dissipation functionals Gamma-converge. In conclusion, we will give specific examples for the applicability of each of the two approaches.
- ItemAnalysis of a hybrid model for the electrothermal behavior of semiconductor heterostructures(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Glitzky, Annegret; Liero, Matthias; Nika, GrigorWe prove existence of a weak solution for a hybrid model for the electro-thermal behavior of semiconductor heterostructures. This hybrid model combines an electro-thermal model based on drift-diffusion with thermistor type models in different subregions of the semiconductor heterostructure. The proof uses a regularization method and Schauder's fixed point theorem. For boundary data compatible with thermodynamic equilibrium we verify, additionally, uniqueness. Moreover, we derive bounds and higher integrability properties for the electrostatic potential and the quasi Fermi potentials as well as the temperature.
- ItemOptimal transport in competition with reaction: The Hellinger-Kantorovich distance and geodesic curves(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Liero, Matthias; Mielke, Alexander; Savaré, GiuseppeWe discuss a new notion of distance on the space of finite and nonnegative measures on Omega C Rd, which we call Hellinger-Kantorovich distance. It can be seen as an infconvolution of the well-known Kantorovich-Wasserstein distance and the Hellinger-Kakutani distance. The new distance is based on a dynamical formulation given by an Onsager operator that is the sum of a Wasserstein diffusion part and an additional reaction part describing the generation and absorption of mass. We present a full characterization of the distance and some of its properties. In particular, the distance can be equivalently described by an optimal transport problem on the cone space over the underlying space Omega. We give a construction of geodesic curves and discuss examples and their general properties.
- ItemThe weighted energy-dissipation principle and evolutionary [Gamma]-convergence for doubly nonlinear problems(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Melchionna, StefanoWe consider a family of doubly nonlinear evolution equations that is given by families of convex dissipation potentials, nonconvex energy functionals, and external forces parametrized by a small parameter ε. For each of these problems, we introduce the so-called weighted energy-dissipation (WED) functional, whose minimizer correspond to solutions of an elliptic-in-time regularization of the target problems with regularization parameter δ. We investigate the relation between the Γ-convergence of the WED functionals and evolutionary Γ-convergence of the associated systems. More precisely, we deal with the limits δ→0, ε→0, as well as δ+ ε→0 either in the sense of Γ-convergence of functionals or in the sense of evolutionary Γ-convergence of functional-driven evolution problems, or both. Additionally, we provide some quantitative estimates on the rate of convergence for the limit ε→0, in the case of quadratic dissipation potentials and uniformly λ-convex energy functionals. Finally, we discuss a homogenization problem as an example of application.
- ItemDrift-diffusion modeling, analysis and simulation of organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Doan, Duy-Hai; Glitzky, Annegret; Liero, MatthiasWe discuss drift-diffusion models for charge-carrier transport in organic semiconductor devices. The crucial feature in organic materials is the energetic disorder due to random alignment of molecules and the hopping transport of carriers between adjacent energetic sites. The former leads to so-called Gauss-Fermi statistics, which describe the occupation of energy levels by electrons and holes. The latter gives rise to complicated mobility models with a strongly nonlinear dependence on temperature, density of carriers, and electric field strength. We present the state-of-the-art modeling of the transport processes and provide a first existence result for the stationary drift-diffusion model taking all of the peculiarities of organic materials into account. The existence proof is based on Schauders fixed-point theorem. Finally, we discuss the numerical discretization of the model using finite-volume methods and a generalized Scharfetter-Gummel scheme for the Gauss-Fermi statistics.
- ItemDrift-diffusion simulation of S-shaped current-voltage relations for organic semiconductor devices(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2019) Doan, Duy Hai; Fischer, Axel; Fuhrmann, Jürgen; Glitzky, Annegret; Liero, MatthiasWe present an electrothermal drift-diffusion model for organic semiconductor devices with Gauss-Fermi statistics and positive temperature feedback for the charge carrier mobilities. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and discretize the system by a finite volume based generalized Scharfetter-Gummel scheme. Using path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, which were only recently observed experimentally.
- Item3D electrothermal simulations of organic LEDs showing negative differential resistance(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Liero, Matthias; Fuhrmann, Jürgen; Glitzky, Annegret; Koprucki, Thomas; Fischer, Axel; Reineke, SebastianOrganic semiconductor devices show a pronounced interplay between temperature-activated conductivity and self-heating which in particular causes inhomogeneities in the brightness of large-area OLEDs at high power. We consider a 3D thermistor model based on partial differential equations for the electrothermal behavior of organic devices and introduce an extension to multiple layers with nonlinear conductivity laws, which also take the diode-like behavior in recombination zones into account. We present a numerical simulation study for a red OLED using a finite-volume approximation of this model. The appearance of S-shaped current-voltage characteristics with regions of negative differential resistance in a measured device can be quantitatively reproduced. Furthermore, this simulation study reveals a propagation of spatial zones of negative differential resistance in the electron and hole transport layers toward the contact.
- ItemWIAS-TeSCA - Two-dimensional semi-conductor analysis package(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Gajewski, Herbert; Liero, Matthias; Nürnberg, Reiner; Stephan, HolgerWIAS-TeSCA (Two- and three-dimensional semiconductor analysis package) is a simulation tool for the numerical simulation of charge transfer processes in semiconductor structures, especially in semiconductor lasers. It is based on the drift-diffusion model and considers a multitude of additional physical effects, like optical radiation, temperature influences and the kinetics of deep impurities. Its efficiency is based on the analytic study of the strongly nonlinear system of partial differential equations – the van Roosbroeck system – which describes the electron and hole currents. Very efficient numerical procedures for both the stationary and transient simulation have been implemented. WIAS-TeSCA has been successfully used in the research and industrial development of new electronic and optoelectronic semiconductor devices such as transistors, diodes, sensors, detectors and lasers and has already proved its worth many times in the planning and optimization of these devices. It covers a broad spectrum of applications, from heterobipolar transistor (mobile telephone systems, computer networks) through high-voltage transistors (power electronics) and semiconductor laser diodes (fiber optic communication systems, medical technology) to radiation detectors (space research, high energy physics). WIAS-TeSCA is an efficient simulation tool for analyzing and designing modern semiconductor devices with a broad range of performance that has proved successful in solving many practical problems. Particularly, it offers the possibility to calculate self-consistently the interplay of electronic, optical and thermic effects.