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Mathematical modeling of semiconductors: From quantum mechanics to devices
2019, Kantner, Markus, Mielke, Alexander, Mittnenzweig, Markus, Rotundo, Nella
We discuss recent progress in the mathematical modeling of semiconductor devices. The central result of this paper is a combined quantum-classical model that self-consistently couples van Roosbroeck's drift-diffusion system for classical charge transport with a Lindblad-type quantum master equation. The coupling is shown to obey fundamental principles of non-equilibrium thermodynamics. The appealing thermodynamic properties are shown to arise from the underlying mathematical structure of a damped Hamitlonian system, which is an isothermal version of so-called GENERIC systems. The evolution is governed by a Hamiltonian part and a gradient part involving a Poisson operator and an Onsager operator as geoemtric structures, respectively. Both parts are driven by the conjugate forces given in terms of the derivatives of a suitable free energy.
Gradient structure for optoelectronic models of semiconductors
2016, Mielke, Alexander, Peschka, Dirk, Rotundo, Nella, Thomas, Marita
We derive an optoelectronic model based on a gradient formulation for the relaxation of electron-, hole- and photon- densities to their equilibrium state. This leads to a coupled system of partial and ordinary differential equations, for which we discuss the isothermal and the non-isothermal scenario separately.