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Author: Mikolajick, T. ×

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    In situ Raman spectroscopy on silicon nanowire anodes integrated in lithium ion batteries
    (Pennington, NJ : Electrochemical Society Inc., 2019) Krause, A.; Tkacheva, O.; Omar, A.; Langklotz, U.; Giebeler, L.; Dörfler, S.; Fauth, F.; Mikolajick, T.; Weber, W.M.
    Rapid decay of silicon anodes during lithiation poses a significant challenge in application of silicon as an anode material in lithium ion batteries. In situ Raman spectroscopy is a powerful method to study the relationship between structural and electrochemical data during electrode cycling and to allow the observation of amorphous as well as liquid and transient species in a battery cell. Herein, we present in situ Raman spectroscopy on high capacity electrode using uncoated and carbon-coated silicon nanowires during first lithiation and delithiation cycle in an optimized lithium ion battery setup and complement the results with operando X-ray reflection diffraction measurements. During lithiation, we were able to detect a new Raman signal at 1859 cm−1 especially on uncoated silicon nanowires. The detailed in situ Raman measurement of the first lithiation/delithiation cycle allowed to differentiate between morphology changes of the electrode as well as interphase formation from electrolyte components.
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    Towards Oxide Electronics: a Roadmap
    (Amsterdam : Elsevier B.V., 2019) Coll, M.; Fontcuberta, J.; Althammer, M.; Bibes, M.; Boschker, H.; Calleja, A.; Cheng, G.; Cuoco, M.; Dittmann, R.; Dkhil, B.; El Baggari, I.; Fanciulli, M.; Fina, I.; Fortunato, E.; Frontera, C.; Fujita, S.; Garcia, V.; Goennenwein, S.T.B.; Granqvist, C.-G.; Grollier, J.; Gross, R.; Hagfeldt, A.; Herranz, G.; Hono, K.; Houwman, E.; Huijben, M.; Kalaboukhov, A.; Keeble, D.J.; Koster, G.; Kourkoutis, L.F.; Levy, J.; Lira-Cantu, M.; MacManus-Driscoll, J.L.; Mannhart, J.; Martins, R.; Menzel, S.; Mikolajick, T.; Napari, M.; Nguyen, M.D.; Niklasson, G.; Paillard, C.; Panigrahi, S.; Rijnders, G.; Sánchez, F.; Sanchis, P.; Sanna, S.; Schlom, D.G.; Schroeder, U.; Shen, K.M.; Siemon, A.; Spreitzer, M.; Sukegawa, H.; Tamayo, R.; van den Brink, J.; Pryds, N.; Granozio, F.M.
    [No abstract available]
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    Key concepts behind forming-free resistive switching incorporated with rectifying transport properties
    (London : Nature Publishing Group, 2013) Shuai, Y.; Ou, X.; Luo, W.; Mücklich, A.; Bürger, D.; Zhou, S.; Wu, C.; Chen, Y.; Zhang, W.; Helm, M.; Mikolajick, T.; Schmidt, O.G.; Schmidt, H.
    This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO 3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO 3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO 2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600 C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO 3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO 3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.