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- ItemUltrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti)(Chichester : John Wiley and Sons Ltd, 2018) Ren, W.; Zhu, H.; Zhu, Q.; Saparamadu, U.; He, R.; Liu, Z.; Mao, J.; Wang, C.; Nielsch, K.; Wang, Z.; Ren, Z.Conversion efficiency and output power are crucial parameters for thermoelectric power generation that highly rely on figure of merit ZT and power factor (PF), respectively. Therefore, the synergistic optimization of electrical and thermal properties is imperative instead of optimizing just ZT by thermal conductivity reduction or just PF by electron transport enhancement. Here, it is demonstrated that Nb0.95Hf0.05FeSb has not only ultrahigh PF over ≈100 µW cm−1 K−2 at room temperature but also the highest ZT in a material system Nb0.95M0.05FeSb (M = Hf, Zr, Ti). It is found that Hf dopant is capable to simultaneously supply carriers for mobility optimization and introduce atomic disorder for reducing lattice thermal conductivity. As a result, Nb0.95Hf0.05FeSb distinguishes itself from other outstanding NbFeSb-based materials in both the PF and ZT. Additionally, a large output power density of ≈21.6 W cm−2 is achieved based on a single-leg device under a temperature difference of ≈560 K, showing the realistic prospect of the ultrahigh PF for power generation.
- ItemAnalysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films(Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
- ItemEfficiency of Magnetostatic Protection Using Nanostructured Permalloy Shielding Coatings Depending on Their Microstructure(Basel : MDPI, 2021) Zubar, T.; Grabchikov, S.; Kotelnikova, A.; Kaniukov, E.; Kutuzau, M.; Leistner, K.; Nielsch, K.; Vershinina, T.; Tishkevich, D.; Kanafyev, O.; Kozlovskiy, A.; Zdorovets, M.; Fedosyuk, V.; Trukhanov, A.The effect of microstructure on the efficiency of shielding or shunting of the magnetic fluxby permalloy shields was investigated in the present work. For this purpose, the FeNi shieldingcoatings with different grain structures were obtained using stationary and pulsed electrodeposition.The coatings’ composition, crystal structure, surface microstructure, magnetic domain structure, andshielding efficiency were studied. It has been shown that coatings with 0.2–0.6μm grains have adisordered domain structure. Consequently, a higher value of the shielding efficiency was achieved,but the working range was too limited. The reason for this is probably the hindered movement of thedomain boundaries. Samples with nanosized grains have an ordered two-domain magnetic structurewith a permissible partial transition to a superparamagnetic state in regions with a grain size of lessthan 100 nm. The ordered magnetic structure, the small size of the domain, and the coexistenceof ferromagnetic and superparamagnetic regions, although they reduce the maximum value ofthe shielding efficiency, significantly expand the working range in the nanostructured permalloyshielding coatings. As a result, a dependence between the grain and domain structure and theefficiency of magnetostatic shielding was found.
- ItemTowards uniform electrochemical porosification of bulk HVPE-grown GaN(Pennington, NJ : Electrochemical Society Inc., 2019) Monaico, E.; Moise, C.; Mihai, G.; Ursaki, V.V.; Leistner, K.; Tiginyanu, I.M.; Enachescu, M.; Nielsch, K.In this paper, we report on results of a systematic study of porous morphologies obtained using anodization of HVPE-grown crystalline GaN wafers in HNO3, HCl, and NaCl solutions. The anodization-induced nanostructuring is found to proceed in different ways on N-and Ga-faces of polar GaN substrates. Complex pyramidal structures are disclosed and shown to be composed of regions with the degree of porosity modulated along the pyramid surface. Depending on the electrolyte and applied anodization voltage, formation of arrays of pores or nanowires has been evidenced near the N-face of the wafer. By adjusting the anodization voltage, we demonstrate that both current-line oriented pores and crystallographic pores are generated. In contrast to this, porosification of the Ga-face proceeds from some imperfections on the surface and develops in depth up to 50 μm, producing porous matrices with pores oriented perpendicularly to the wafer surface, the thickness of the pore walls being controlled by the applied voltage. The observed peculiarities are explained by different values of the electrical conductivity of the material near the two wafer surfaces.
- ItemTowards a reliable bridge joint between REBCO coated conductors(Bristol : IOP Publ., 2020) Kirchner, A.; Nielsch, K.; Hühne, R.REBa2Cu3O7-x (REBCO; RE = Y, Gd) coated conductor wires are commercially available up to a length of about 1 km. However, for large-scale devices like superconducting coils for high-field magnets several kilometres of a coated conductors are required. Therefore, it is desirable to use joints, which exhibit similar superconducting properties as the coated conductor itself. In this study, we jointed commercial REBCO coated conductors by a two-step procedure. At first, a superconducting soldering solution was developed and deposited on unstabilized coated conductors via chemical solution deposition. The soldering precursor is based on a Cu-rich solution with a metal cation ratio Y:Ba:Cu of 1:2:4. Secondly, a piece of the coated conductor was delaminated between the superconducting and the buffer layer and used as bridge between two other conductors covered with the soldering layer. Annealing the resulting bridge joint under pressure results in a mechanical stable configuration. © Published under licence by IOP Publishing Ltd.
- ItemElectrochemically deposited nanocrystalline InSb thin films and their electrical properties(Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
- ItemMicrostructural defects in hot deformed and as-transformed τ-MnAl-C(Lausanne : Elsevier, 2021) Zhao, P.; Feng, L.; Nielsch, K.; Woodcock, T.G.In this study, detailed microstructural characterisation has been conducted in both as-transformed and hot deformed samples of τ-MnAl-C using transmission electron microscopy. After hot deformation, true twins, dislocations, intrinsic stacking faults and precipitates of Mn3AlC are the main defects in the recrystallised grains. True twins and order twins were distinguished based on differences in their diffraction patterns. A significant fraction of non-recrystallised grains existed, which had microstructures based on combinations of high densities of true twins, dislocations, and deformation bands. The formation of the Mn3AlC precipitates was confirmed and related to the reduction of saturation magnetization and the increase in the Curie temperature of τ-MnAl-C after hot deformation. Antiphase boundaries, which are believed to act as nucleation sites for reverse domains, were not observed in the hot deformed sample.
- ItemDiscovery of TaFeSb-based half-Heuslers with high thermoelectric performance(London : Nature Publishing Group, 2019) Zhu, H.; Mao, J.; Li, Y.; Sun, J.; Wang, Y.; Zhu, Q.; Li, G.; Song, Q.; Zhou, J.; Fu, Y.; He, R.; Tong, T.; Liu, Z.; Ren, W.; You, L.; Wang, Z.; Luo, J.; Sotnikov, A.; Bao, J.; Nielsch, K.; Chen, G.; Singh, D.J.; Ren, Z.Discovery of thermoelectric materials has long been realized by the Edisonian trial and error approach. However, recent progress in theoretical calculations, including the ability to predict structures of unknown phases along with their thermodynamic stability and functional properties, has enabled the so-called inverse design approach. Compared to the traditional materials discovery, the inverse design approach has the potential to substantially reduce the experimental efforts needed to identify promising compounds with target functionalities. By adopting this approach, here we have discovered several unreported half-Heusler compounds. Among them, the p-type TaFeSb-based half-Heusler demonstrates a record high ZT of ~1.52 at 973 K. Additionally, an ultrahigh average ZT of ~0.93 between 300 and 973 K is achieved. Such an extraordinary thermoelectric performance is further verified by the heat-to-electricity conversion efficiency measurement and a high efficiency of ~11.4% is obtained. Our work demonstrates that the TaFeSb-based half-Heuslers are highly promising for thermoelectric power generation.
- ItemDiscovery of ZrCoBi based half Heuslers with high thermoelectric conversion efficiency(London : Nature Publishing Group, 2018) Zhu, H.; He, R.; Mao, J.; Zhu, Q.; Li, C.; Sun, J.; Ren, W.; Wang, Y.; Liu, Z.; Tang, Z.; Sotnikov, A.; Wang, Z.; Broido, D.; Singh, D.J.; Chen, G.; Nielsch, K.; Ren, Z.Thermoelectric materials are capable of converting waste heat into electricity. The dimensionless figure-of-merit (ZT), as the critical measure for the material's thermoelectric performance, plays a decisive role in the energy conversion efficiency. Half-Heusler materials, as one of the most promising candidates for thermoelectric power generation, have relatively low ZTs compared to other material systems. Here we report the discovery of p-type ZrCoBi-based half-Heuslers with a record-high ZT of ∼1.42 at 973 K and a high thermoelectric conversion efficiency of ∼9% at the temperature difference of ∼500 K. Such an outstanding thermoelectric performance originates from its unique band structure offering a high band degeneracy (N v) of 10 in conjunction with a low thermal conductivity benefiting from the low mean sound velocity (v m ∼2800 m s-1). Our work demonstrates that ZrCoBi-based half-Heuslers are promising candidates for high-temperature thermoelectric power generation.
- ItemThermoelectric properties of silicon and recycled silicon sawing waste(Peking : Chinese Ceramic Society, 2019) He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G.Large-scale-applicable thermoelectric materials should be both self-sustaining, in order to survive long-term duty cycles, and nonpolluting. Among all classes of known thermoelectric materials, these criteria reduce the available candidate pool, leaving silicon as one of the remaining options. Here we first review the thermoelectric properties of various silicon-related materials with respect to their morphologies and microstructures. We then report the thermoelectric properties of silicon sawing wastes recycled from silicon wafer manufacturing. We obtain a high power factor of ∼32 μW cm−1 K−2 at 1273 K with 6% phosphorus substitution in the Si crystal, a value comparable to that of phosphorus-doped silicon-germanium alloys. Our work suggests the large-scale thermoelectric applicability of recycled silicon that would otherwise contribute to the millions of tons of industrial waste produced by the semiconductor industry.
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