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- ItemAnalysis of electronic properties frommagnetotransport measurements on Ba(Fe1-xNix)2As2 thin films(Basel : MDPI AG, 2020) Shipulin, I.; Richter, S.; Thomas, A.A.; Nielsch, K.; Hühne, R.; Martovitsky, V.We performed a detailed structural, magnetotransport, and superconducting analysis of thin epitaxial Ba(Fe1-xNix)2As2 films with Ni doping of x = 0.05 and 0.08, as prepared by pulsed laser deposition. X-ray diffraction studies demonstrate the high crystalline perfection of the films, which have a similar quality to single crystals. Furthermore, magnetotransport measurements of the films were performed in magnetic fields up to 9 T. The results we used to estimate the density of electronic states at the Fermi level, the coefficient of electronic heat capacity, and other electronic parameters for this compound, in their dependence on the dopant concentration within the framework of the Ginzburg-Landau-Abrikosov-Gorkov theory. The comparison of the determined parameters with measurement data on comparable Ba(Fe1-xNix)2As2 single crystals shows good agreement, which confirms the high quality of the obtained films.
- ItemEfficiency of Magnetostatic Protection Using Nanostructured Permalloy Shielding Coatings Depending on Their Microstructure(Basel : MDPI, 2021) Zubar, T.; Grabchikov, S.; Kotelnikova, A.; Kaniukov, E.; Kutuzau, M.; Leistner, K.; Nielsch, K.; Vershinina, T.; Tishkevich, D.; Kanafyev, O.; Kozlovskiy, A.; Zdorovets, M.; Fedosyuk, V.; Trukhanov, A.The effect of microstructure on the efficiency of shielding or shunting of the magnetic fluxby permalloy shields was investigated in the present work. For this purpose, the FeNi shieldingcoatings with different grain structures were obtained using stationary and pulsed electrodeposition.The coatings’ composition, crystal structure, surface microstructure, magnetic domain structure, andshielding efficiency were studied. It has been shown that coatings with 0.2–0.6μm grains have adisordered domain structure. Consequently, a higher value of the shielding efficiency was achieved,but the working range was too limited. The reason for this is probably the hindered movement of thedomain boundaries. Samples with nanosized grains have an ordered two-domain magnetic structurewith a permissible partial transition to a superparamagnetic state in regions with a grain size of lessthan 100 nm. The ordered magnetic structure, the small size of the domain, and the coexistenceof ferromagnetic and superparamagnetic regions, although they reduce the maximum value ofthe shielding efficiency, significantly expand the working range in the nanostructured permalloyshielding coatings. As a result, a dependence between the grain and domain structure and theefficiency of magnetostatic shielding was found.
- ItemElectrochemically deposited nanocrystalline InSb thin films and their electrical properties(Cambridge : Royal Society of Chemistry, 2016) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferred to an industrial scale. The morphology, composition, and crystallinity of the prepared uniform and compact thin films with a surface area of around 1 cm2 were investigated. The essential electrical characteristics such as conductivity, Seebeck coefficient, the type, concentration and mobility of charge carriers have been examined and compared with InSb nanowires obtained in the same system for electrochemical deposition (fixed pulse sequence, temperature, electrolyte composition, and system geometry). Moreover, obtained thin films show much higher band gap energy (0.53 eV) compared to the bulk material (0.17 eV) and InSb nanowires (0.195 eV).
- ItemDiscovery of TaFeSb-based half-Heuslers with high thermoelectric performance(London : Nature Publishing Group, 2019) Zhu, H.; Mao, J.; Li, Y.; Sun, J.; Wang, Y.; Zhu, Q.; Li, G.; Song, Q.; Zhou, J.; Fu, Y.; He, R.; Tong, T.; Liu, Z.; Ren, W.; You, L.; Wang, Z.; Luo, J.; Sotnikov, A.; Bao, J.; Nielsch, K.; Chen, G.; Singh, D.J.; Ren, Z.Discovery of thermoelectric materials has long been realized by the Edisonian trial and error approach. However, recent progress in theoretical calculations, including the ability to predict structures of unknown phases along with their thermodynamic stability and functional properties, has enabled the so-called inverse design approach. Compared to the traditional materials discovery, the inverse design approach has the potential to substantially reduce the experimental efforts needed to identify promising compounds with target functionalities. By adopting this approach, here we have discovered several unreported half-Heusler compounds. Among them, the p-type TaFeSb-based half-Heusler demonstrates a record high ZT of ~1.52 at 973 K. Additionally, an ultrahigh average ZT of ~0.93 between 300 and 973 K is achieved. Such an extraordinary thermoelectric performance is further verified by the heat-to-electricity conversion efficiency measurement and a high efficiency of ~11.4% is obtained. Our work demonstrates that the TaFeSb-based half-Heuslers are highly promising for thermoelectric power generation.
- ItemThermoelectric properties of silicon and recycled silicon sawing waste(Peking : Chinese Ceramic Society, 2019) He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G.Large-scale-applicable thermoelectric materials should be both self-sustaining, in order to survive long-term duty cycles, and nonpolluting. Among all classes of known thermoelectric materials, these criteria reduce the available candidate pool, leaving silicon as one of the remaining options. Here we first review the thermoelectric properties of various silicon-related materials with respect to their morphologies and microstructures. We then report the thermoelectric properties of silicon sawing wastes recycled from silicon wafer manufacturing. We obtain a high power factor of ∼32 μW cm−1 K−2 at 1273 K with 6% phosphorus substitution in the Si crystal, a value comparable to that of phosphorus-doped silicon-germanium alloys. Our work suggests the large-scale thermoelectric applicability of recycled silicon that would otherwise contribute to the millions of tons of industrial waste produced by the semiconductor industry.
- ItemCorrection: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties (Journal of Materials Chemistry C (2016) 4 (1345-1350) DOI: 10.1039/C5TC03656A)(London : RSC Publ., 2019) Hnida, K.E.; Bäßler, S.; Mech, J.; Szaciłowski, K.; Socha, R.P.; Gajewska, M.; Nielsch, K.; Przybylski, M.; Sulka, G.D.There was an error in eqn (3) which was reproduced from the literature and used for the interpretation of the results. The calculations (using the equations from an original work from 1987) were done according the correct version of eqn (3) presented below:. (Table Presented). © 2019 The Royal Society of Chemistry.
- ItemAdvances in magneto-ionic materials and perspectives for their application(College Park, MD : American Institute of Physics, 2021) Nichterwitz, M.; Honnali Sudheendra, S.; Kutuzau, M.; Guo, S.; Zehner, J.; Nielsch, K.; Leistner, K.The possibility of tuning magnetic material properties by ionic means is exciting both for basic science and, especially in view of the excellentenergy efficiency and room temperature operation, for potential applications. In this perspective, we shortly introduce the functionality ofmagneto-ionic materials and focus on important recent advances in this field. We present a comparative overview of state-of-the-art magneto-ionic materials considering the achieved magnetoelectric voltage coefficients for magnetization and coercivity and the demonstrated timescales for magneto-ionic switching. Furthermore, the application perspectives of magneto-ionic materials in data storage and computing,magnetic actuation, and sensing are evaluated. Finally, we propose potential research directions to push this field forward and tackle thechallenges related to future applications
- ItemModulations in martensitic Heusler alloys originate from nanotwin ordering(London : Nature Publishing Group, 2018) Gruner, M.E.; Niemann, R.; Entel, P.; Pentcheva, R.; Rößler, U.K.; Nielsch, K.; Fähler, S.Heusler alloys exhibiting magnetic and martensitic transitions enable applications like magnetocaloric refrigeration and actuation based on the magnetic shape memory effect. Their outstanding functional properties depend on low hysteresis losses and low actuation fields. These are only achieved if the atomic positions deviate from a tetragonal lattice by periodic displacements. The origin of the so-called modulated structures is the subject of much controversy: They are either explained by phonon softening or adaptive nanotwinning. Here we used large-scale density functional theory calculations on the Ni2MnGa prototype system to demonstrate interaction energy between twin boundaries. Minimizing the interaction energy resulted in the experimentally observed ordered modulations at the atomic scale, it explained that a/b twin boundaries are stacking faults at the mesoscale, and contributed to the macroscopic hysteresis losses. Furthermore, we found that phonon softening paves the transformation path towards the nanotwinned martensite state. This unified both opposing concepts to explain modulated martensite.
- ItemCompositional complexity dependence of dislocation density and mechanical properties in high entropy alloy systems(Amsterdam : Elsevier, 2020) Thirathipviwat, P.; Song, G.; Bednarcik, J.; Kühn, U.; Gemming, T.; Nielsch, K.; Han, J.This study focuses on a quantitative analysis of dislocation accumulation after cold plastic deformation and mechanical properties of FeNiCoCrMn and TiNbHfTaZr high entropy alloys (HEAs) which are single phase fcc and bcc solid solutions, respectively. In order to study the role of compositional complexity from unary to quinary compositions on dislocation accumulation and mechanical properties after plastic deformation, the single solid solution phase forming sub-alloys of the two HEAs were investigated. All studied samples revealed a large plastic deformability under cold-rotary swaging process by 85–90% area reduction without intermediate annealing. The dislocation density of all studied samples, determined by Williamson-Hall method on synchrotron X-ray diffraction patterns, were between 1014 - 1015 m−2 dependent on the alloy composition. The level of dislocation density after plastic deformation is not only affected by the number of constituent element but the lattice distortion and intrinsic properties in terms of stacking fault energy, modulus misfit, and melting point also impact the dislocation storage. The level of dislocation density determines the level of mechanical properties because of a resistance to dislocation motions. The hardness and yield compressive strength of the studied samples are proportional to the level of dislocation density.