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Author: Rachinskii, Dmitrii × Subject: bifurcations ×

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Now showing 1 - 3 of 3
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    An optically injected mode locked laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Rebrova, Natalia; Huyet, Guillaume; Rachinskii, Dmitrii; Vladimirov, Andrei G.
    We study analytically and numerically a delay differential model of a passively mode-locked semiconductor laser subjected to a single frequency coherent injection. The width of the locking cone is calculated asymptotically in the limit of small injection and compared to that obtained by direct numerical integration of the model equations. The dependence of the locking cone on the laser parameters is discussed
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    Dynamical regimes in a monolithic passively mode-locked quantum dot laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Vladimirov, Andrei; Bandelow, Uwe; Fiol, Gerrit; Arsenijevi´c, Dejan; Kleinert, Moritz; Bimberg, Dieter; Pimenov, Alexander; Rachinskii, Dmitrii
    Operation regimes of a two section monolithic quantum dot (QD) mode-locked laser are studied experimentally and theoretically, using a model that takes into account carrier exchange between QD ground state and 2D reservoir of a QD-in-a-well structure, and experimentally. It is shown analytically and numerically that, when the absorber section is long enough, the laser exhibits bistability between laser off state and different mode-locking regimes. The Q-switching instability leading to slow modulation of the mode-locked pulse peak intensity is completely eliminated in this case. When, on the contrary, the absorber length is rather short, in addition to usual Q-switched mode-locking, pure Q-switching regimes are predicted theoretically and observed experimentally.
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    Bifurcations in a model of monolithic passively mode-locked semiconductior laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Vladimirov, Andrei; Pimenov, Alexander; Rachinskii, Dmitrii
    Bifurcation mechanisms of the development and break up of different operation regimes in a passively mode-locked monolithic semiconductor laser are studied by solving numerically partial differential equations for amplitudes of two counterpropagating waves and carrier densities in gain and absorber sections. It is shown that harmonic mode-locking regime with two pulses in the cavity can exhibit a period-doubling bifurcation leading to different amplitudes and separations of the pulses. The effect of linewidth enhancement factors in gain and absorber sections on the laser dynamics is discussed.