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Author: Radziunas, Mindaugas × End date: 2019 × Start date: 2019 × DDC: 510 ×

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Now showing 1 - 10 of 34
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    Modeling and simulations of beam stabilization in edge-emitting broad area semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Cˇ iegis, Raimondas
    A 2+1 dimensional PDE traveling wave model describing spatial-lateral dynamics of edge-emitting broad area semiconductor devices is considered. A numerical scheme based on a split-step Fourier method is presented and implemented on a parallel compute cluster. Simulations of the model equations are used for optimizing of existing devices with respect to the emitted beam quality, as well as for creating and testing of novel device design concepts
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    Traveling wave modeling of nonlinear dynamics in multisection semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2016) Radziunas, Mindaugas
    A hierarchy of 1 (time) + 1 (space) dimensional first-order partial differential equation (traveling wave) models is used for a description of dynamics in individual semiconductor lasers, various multisection semiconductor lasers, and coupled laser systems. Consequent modifications of the basic traveling wave model allow for taking into account different physical effects such as the gain dispersion, the thermal detuning, the spatial hole burning of carriers, the nonlinear gain saturation, or various carrier exchange processes in quantum dot lasers. For illustration, the model was applied for simulations of dynamics in complex ring laser with four branches of filtered feedback. Finally, several advanced techniques for model analysis such as calculation of instantaneous optical modes, finding of steady states, and numerical continuation and bifurcation analysis of the model equations were discussed and illustrated by example simulations.
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    Simulations and analysis of beam quality improvement in spatially modulated broad area edge-emitting devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2014) Radziunas, Mindaugas; Herrero, Ramon; Botey, Muriel; Staliunas, Kestutis
    We simulate and analyze how beam quality improves while being amplified in edge emitting broad area semiconductor amplifiers with a periodic structuring of the electrical contacts, in both longitudinal and lateral directions. A spatio-temporal traveling wave model is used for simulations of the dynamics and nonlinear interactions of the optical fields, induced polarizations and carrier density. In the case of small beam amplification, the optical field can be expanded into few Bloch modes, so that the system is described by a set of ODEs for the evolution of the mode amplitudes. The analysis of such model provides a deep understanding of the impact of the different parameters on amplification and on spatial (angular) filtering of the beam. It is shown that under realistic parameters the twodimensional modulation of the current can lead not only to a significant reduction of the emission divergence, but also to an additional amplification of the emitted field.
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    Beam shaping mechanism in spatially modulated edge emitting broad area semiconductor amplifiers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2013) Radziunas, Mindaugas; Botey, Muriel; Herrero, Ramon; Staliunas, Kestutis
    We investigate beam shaping in broad area semiconductor amplifiers induced by a periodic modulation of the pump on a scale of several microns. The study is performed by solving numerically a (2+1)-dimensional model for the semiconductor amplifier. We show that, under realistic conditions, the anisotropic gain induced by the pump periodicity can show narrow angular profile of enhanced gain of less than one degree, providing an intrinsic filtering mechanism and eventually improving the spatial beam quality.
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    Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Zeghuzi, Anissa; Radziunas, Mindaugas; Wenzel, Hans; Wünsche, Hans-Jürgen; Bandelow, Uwe; Knigge, Andrea
    The effect of current spreading on the lateral farfield divergence of highpower broadarea lasers is investigated with a timedependent model using different descriptions for the injection of carriers into the active region. Most simulation tools simply assume a spatially constant injection current density below the contact stripe and a vanishing current density beside. Within the driftdiffusion approach, however, the injected current density is obtained from the gradient of the quasiFermi potential of the holes, which solves a Laplace equation in the pdoped region if recombination is neglected. We compare an approximate solution of the Laplace equation with the exact solution and show that for the exact solution the highest farfield divergence is obtained. We conclude that an advanced modeling of the profiles of the injection current densities is necessary for a correct description of farfield blooming in broadarea lasers.
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    Semiconductor mode-locked lasers with coherent dual mode optical injection: Simulations, analysis and experiment
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2015) Arkhipov, Rostislav M.; Habruseva, Tatiana; Pimenov, Alexander; Radziunas, Mindaugas; Huyet, Guillaume; Vladimirov, Andrei G.
    Using a delay differential equations model we study the dynamics of a passively modelocked semiconductor laser with dual frequency coherent optical injection. The locking regions where the laser pulse repetition rate is synchronized to the separation of the two injected frequencies were calculated numerically and measured experimentally. Asymptotic analysis performed in the limit of the small injection field amplitude revealed the dependence of the locking regions on the model parameters, such as optical bandwidth, absorber recovery time and linear losses.
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    Mode transitions in distributed-feedback tapered master-oscillator power-amplifier
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2008) Radziunas, Mindaugas; Tronciu, Vasile Z.; Bandelow, Uwe; Lichtner, Mark; Spreemann, Martin; Wenzel, Hans
    Theoretical and experimental investigations have been carried out to study the spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillators power-amplifiers emitting around 973 nm. Introduction of self and cross heating effects and the analysis of longitudinal optical modes allows us to explain experimental results. The results show a good qualitative agreement between measured and calculated characteristics.
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    Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2017) Radziunas, Mindaugas; Zeghuzi, Anissa; Fuhrmann, Jürgen; Koprucki, Thomas; Wünsche, Hans-Jürgen; Wenzel, Hans; Bandelow, Uwe
    We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edgeemitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone.
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    Chirped photonic crystal for spatially filtered optical feedback to a broad-area laser
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2018) Brée, Carsten; Gailevicius, Darius; Purlys, Vytautas; Werner, Guillermo Garre; Staliunas, Kestutis; Rathsfeld, Andreas; Schmidt, Gunther; Radziunas, Mindaugas
    We derive and analyze an efficient model for reinjection of spatially filtered optical feedback from an external resonator to a broad area, edge emitting semiconductor laser diode. Spatial filtering is achieved by a chirped photonic crystal, with variable periodicity along the optical axis and negligible resonant backscattering. The optimal chirp is obtained from a genetic algorithm, which yields solutions that are robust against perturbations. Extensive numerical simulations of the composite system with our optoelectronic solver indicate that spatially filtered reinjection enhances lower-order transversal optical modes in the laser diode and, consequently, improves the spatial beam quality.
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    Traveling wave modeling, simulation and analysis of quantum-dot mode-locked semiconductor lasers
    (Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2010) Radziunas, Mindaugas; Vladimirov, A.G.; Viktorov, E.A.
    We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.